18243437. SEMICONDUCTOR PACKAGE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR PACKAGE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Youngdeuk Kim of Suwon-si (KR)

Mina Choi of Suwon-si (KR)

SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18243437 titled 'SEMICONDUCTOR PACKAGE

Simplified Explanation

The semiconductor package described in the patent application includes a heat dissipation member with a heat dissipation plate and a seed metal layer, as well as a metal thermal interfacial material (TIM) on the seed metal layer.

  • The semiconductor package includes a first substrate and a first chip structure with at least one chip.
  • A heat dissipation member is placed on the first chip structure, consisting of a heat dissipation plate with a seed metal layer.
  • The seed metal layer is located on the second surface of the heat dissipation plate.
  • A metal thermal interfacial material (TIM) is applied on the seed metal layer.

Potential Applications

  • This technology can be used in electronic devices such as computers, smartphones, and servers to improve heat dissipation and thermal management.
  • It can also be applied in automotive electronics to enhance the performance and reliability of semiconductor components.

Problems Solved

  • Improves heat dissipation efficiency, reducing the risk of overheating and potential damage to semiconductor devices.
  • Enhances the overall performance and longevity of electronic devices by maintaining optimal operating temperatures.

Benefits

  • Increased reliability and durability of semiconductor components.
  • Improved thermal management leading to better overall performance of electronic devices.
  • Enhanced safety by preventing overheating issues that could potentially cause malfunctions or failures.


Original Abstract Submitted

Provided is a semiconductor package including a first substrate, a first chip structure on the first substrate, the first chip structure including at least one chip, a heat dissipation member on the first chip structure, the heat dissipation member including a heat dissipation plate including a first surface facing the first chip structure and a second surface opposite to the first surface and a seed metal layer on the second surface of the heat dissipation plate, and a metal thermal interfacial material (TIM) on the seed metal layer.