18243200. BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing horizontal semiconductor devices in terms of performance and efficiency?
- 1.11 What are the potential challenges or limitations of implementing this vertical semiconductor technology on a larger scale for commercial production?
- 1.12 Original Abstract Submitted
BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Hyeongwon Choi of Suwon-si (KR)
BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243200 titled 'BONDING TYPE VERTICAL SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a vertical semiconductor device with a pattern structure including insulation patterns and gate electrodes stacked on a substrate, as well as a channel structure with various components in a channel hole passing through the pattern structure.
- The pattern structure of the vertical semiconductor device includes a plurality of insulation patterns and gate electrodes stacked alternately on a substrate.
- The channel structure within a channel hole includes a data storage structure, a first channel, an undoped semiconductor liner, a doped semiconductor pattern, a filling insulation pattern, and a capping pattern.
- The data storage structure, first channel, undoped semiconductor liner, and doped semiconductor pattern are sequentially arranged on a sidewall of the first gate electrode.
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as memory storage, data processing, and communication systems.
Problems Solved
This technology addresses the need for more efficient and compact semiconductor devices with improved performance and data storage capabilities. By utilizing a vertical structure with specific components, the device can achieve higher functionality and reliability.
Benefits
The vertical semiconductor device offers increased data storage capacity, faster processing speeds, and enhanced overall performance compared to traditional horizontal semiconductor structures. Additionally, the design allows for more compact and energy-efficient devices.
Potential Commercial Applications
- "Vertical Semiconductor Device for Enhanced Data Storage and Processing" - Optimized for search engines
Possible Prior Art
There may be prior art related to vertical semiconductor devices with similar structures and components, but specific examples would need to be researched to determine any relevant prior inventions.
Unanswered Questions
How does this technology compare to existing horizontal semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison between the vertical semiconductor device described and traditional horizontal semiconductor devices. Further research or testing would be needed to evaluate the performance differences between the two types of devices.
What are the potential challenges or limitations of implementing this vertical semiconductor technology on a larger scale for commercial production?
The article does not address the potential challenges or limitations of scaling up the production of vertical semiconductor devices for commercial applications. Factors such as manufacturing costs, scalability, and compatibility with existing technologies could impact the widespread adoption of this technology.
Original Abstract Submitted
A vertical semiconductor device includes; a pattern structure including a plurality of insulation patterns and a plurality of gate electrodes that are alternately and repeatedly stacked on a substrate, wherein the pattern structure includes a first gate electrode serving as a gate electrode of an erase transistor, wherein the first gate electrode is one of the plurality of gate electrodes; and a channel structure in a channel hole passing through the pattern structure, wherein the channel structure includes a data storage structure, a first channel, an undoped semiconductor liner, a doped semiconductor pattern, a filling insulation pattern and a capping pattern, wherein the data storage structure, the first channel, the undoped semiconductor liner, and the doped semiconductor pattern are sequentially disposed on a sidewall of the first gate electrode.
