18240045. SENSE AMPLIFIER, MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND OPERATING METHOD OF MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SENSE AMPLIFIER, MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND OPERATING METHOD OF MEMORY DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Changyoung Lee of Suwon-si (KR)

Kyuchang Kang of Suwon-si (KR)

SENSE AMPLIFIER, MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND OPERATING METHOD OF MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18240045 titled 'SENSE AMPLIFIER, MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND OPERATING METHOD OF MEMORY DEVICE

Simplified Explanation

A sense amplifier in a patent application is described as a circuit that includes isolation transistors connected to memory cells through bit lines, sense amplifying circuitry connected to the memory cells and a latch, and sense bit lines for storing data corresponding to cell voltages. The circuit is configured to perform offset cancellation while charge sharing operations are performed between memory cells and bit lines.

  • The sense amplifier includes isolation transistors connected to memory cells through bit lines.
  • Sense amplifying circuitry is connected to memory cells and a latch, as well as to sense bit lines for storing data.
  • The circuit is designed to perform offset cancellation during charge sharing operations between memory cells and bit lines.

Potential Applications

This technology could be applied in:

  • Memory devices
  • Data storage systems
  • Integrated circuits

Problems Solved

This technology helps to:

  • Improve accuracy of data readouts
  • Enhance performance of memory cells
  • Reduce errors in data retrieval

Benefits

The benefits of this technology include:

  • Increased reliability of memory systems
  • Faster data access speeds
  • Enhanced overall system performance

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Computer hardware
  • Data centers

Possible Prior Art

One possible prior art for this technology could be:

  • Existing sense amplifier circuits used in memory devices

Unanswered Questions

How does this technology compare to existing sense amplifier designs in terms of performance and efficiency?

This question can be answered through comparative testing and analysis of the new technology against existing designs.

What are the potential limitations or drawbacks of implementing this technology in practical applications?

This question can be addressed through thorough testing and evaluation of the technology in real-world scenarios to identify any challenges or limitations.


Original Abstract Submitted

A sense amplifier includes a first isolation transistor connected to a first memory cell through a first bit line, a second isolation transistor connected to a second memory cell through a second bit line, and sense amplifying circuitry connected to the first memory cell through the first isolation transistor, connected to the second memory cell through the second isolation transistor, and latch, to a pair of sense bit lines, data corresponding to a cell voltage stored in the first memory cell or the second memory cell, wherein the sense amplifying circuitry is configured to perform an offset cancellation operation while a charge sharing operation is performed between the first memory cell and the first bit line or between the second memory cell and the second bit line.