18240008. SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Myoung Jae Seo of Suwon-si (KR)
Sung Gil Kang of Suwon-si (KR)
Sung Yong Park of Suwon-si (KR)
SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18240008 titled 'SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves fabricating a semiconductor device by processing a substrate using a substrate processing apparatus and a process etchant generated from a process gas through plasma ignition. The composition rate of the process etchant is identified and used to control the processing of the substrate based on the process result.
- Loading a substrate into a substrate processing apparatus
- Processing the substrate using a process etchant generated from a process gas through plasma ignition
- Identifying the composition rate of the process etchant
- Controlling the processing of the substrate based on the composition rate of the process etchant
Potential Applications
This technology could be applied in the semiconductor industry for the fabrication of advanced semiconductor devices.
Problems Solved
This technology helps in improving the efficiency and accuracy of semiconductor device fabrication processes by controlling the processing based on the composition rate of the process etchant.
Benefits
The benefits of this technology include enhanced control over the semiconductor device fabrication process, leading to improved quality and performance of the final products.
Potential Commercial Applications
The potential commercial applications of this technology could include semiconductor manufacturing companies looking to enhance their fabrication processes for better product outcomes.
Possible Prior Art
One possible prior art could be the use of plasma etching techniques in semiconductor device fabrication processes to improve precision and control.
Unanswered Questions
How does the identification of the composition rate of the process etchant impact the overall efficiency of the semiconductor device fabrication process?
The identification of the composition rate of the process etchant allows for precise control and adjustment of the processing parameters, leading to improved efficiency and accuracy in the fabrication process.
What are the specific characteristics of the first etchant and second etchant used in the process etchant?
The specific characteristics of the first etchant and second etchant, such as their reactivity and selectivity, play a crucial role in determining the effectiveness of the semiconductor device fabrication process.
Original Abstract Submitted
A method of fabricating a semiconductor device is provided. The method includes: loading a substrate into a substrate processing apparatus; and processing the substrate, using the substrate processing apparatus. The processing the substrate includes: providing a process gas; generating a process etchant from the process gas, using plasma ignition, the process etchant including a first etchant and a second etchant; processing the substrate, using the process etchant; identifying a composition rate of the process etchant; and controlling the processing of the substrate based on a process result according to the composition rate of the process etchant.
