18239193. MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES simplified abstract (Micron Technology, Inc.)

MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES

Organization Name

Micron Technology, Inc.

Inventor(s)

Tomoko Ogura Iwasaki of San Jose CA (US)

Hong-Yan Chen of San Jose CA (US)

Pamela Castalino of Boise ID (US)

Priya Vemparala Guruswamy of Boise ID (US)

Jun Xu of San Jose CA (US)

Gianluca Nicosia of Boise ID (US)

Ji-Hye Gale Shin of Palo Alto CA (US)

MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18239193 titled 'MEMORY DEVICES WITH PROGRAM VERIFY LEVELS BASED ON COMPENSATION VALUES

Simplified Explanation

The abstract describes a memory device with a controller that programs memory cells based on a compensation value and senses the threshold voltage of the selected memory cell to determine if programming should be inhibited.

• Memory device includes an array of memory cells and a controller
• Controller programs memory cells based on compensation value
• Controller senses threshold voltage of selected memory cell
• If compensation value is first value and threshold voltage is greater than first program verify level, programming is inhibited
• If compensation value is second value and threshold voltage is greater than second program verify level but less than first program verify level, programming is inhibited

Potential Applications:

• Non-volatile memory devices
• Solid-state drives
• Flash memory

Problems Solved:

• Ensures accurate programming of memory cells
• Prevents over-programming or under-programming of memory cells

Benefits:

• Improved reliability of memory devices
• Enhanced data retention
• Increased performance of memory devices

Original Abstract Submitted

A memory device includes an array of memory cells and a controller configured to access the array of memory cells to program a selected memory cell of the array of memory cells to a target level based on a compensation value of a program command. The controller is further configured to sense a threshold voltage of the selected memory cell. The controller is further configured to in response to the compensation value having a first value and the threshold voltage being greater than a first program verify level, inhibit programming of the selected memory cell. The controller is further configured to in response to the compensation value having a second value different from the first value and the threshold voltage being greater than a second program verify level less than the first program verify level, inhibit programming of the selected memory cell.