18239191. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18239191 titled 'METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device involving the formation of gate insulation layers and gate electrode layers on a substrate with different regions.
- Formation of gate insulation layer on substrate with first and second regions
- Formation of first gate electrode layer on gate insulation layer in first and second regions
- Formation of first sacrificial layer pattern on first gate electrode layer in second region
- Formation of second gate electrode layer on first gate electrode layer in first region and first sacrificial layer pattern in second region
- Removal of second gate electrode layer and first sacrificial layer pattern in second region to form first and second gate electrodes
Potential Applications
The technology can be applied in the manufacturing of various semiconductor devices such as transistors, diodes, and integrated circuits.
Problems Solved
This technology solves the problem of efficiently forming gate electrodes with different configurations on a semiconductor substrate.
Benefits
The method allows for the precise formation of gate electrodes in different regions of the substrate, improving the performance and reliability of semiconductor devices.
Potential Commercial Applications
This technology can be utilized in the production of advanced electronic devices for various industries such as telecommunications, computing, and consumer electronics.
Possible Prior Art
One possible prior art could be the use of sacrificial layers in semiconductor device manufacturing processes to create intricate structures on substrates.
Unanswered Questions
How does this method compare to existing techniques for forming gate electrodes on semiconductor devices?
This article does not provide a direct comparison between this method and other existing techniques in terms of efficiency, cost-effectiveness, or performance.
What are the specific semiconductor materials compatible with this manufacturing method?
The article does not specify the types of semiconductor materials that can be used with this manufacturing method, which could impact the applicability of the technology in different semiconductor devices.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes forming a gate insulation layer on a substrate having first and second regions. A first gate electrode layer is formed on the gate insulation layer in the first and second regions. A first sacrificial layer pattern is formed on the first gate electrode layer in the second region. A second gate electrode layer is formed on the first gate electrode layer in the first region and the first sacrificial layer pattern in the second region. The second gate electrode layer and the first sacrificial layer pattern in the second region are removed to form a first gate electrode including the gate insulation layer, the first gate electrode layer and the second gate electrode layers stacked on each other in the first region, and a second gate electrode including the first gate electrode layer on the gate insulation layer in the second region.
