18236922. SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES simplified abstract (Applied Materials, Inc.)
Contents
- 1 SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES
Organization Name
Inventor(s)
Chang Seok Kang of San Jose CA (US)
Sung-Kwan Kang of San Jose CA (US)
SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18236922 titled 'SINGLE GATE THREE-DIMENSIONAL (3D) DYNAMIC RANDOM-ACCESS MEMORY (DRAM) DEVICES
Simplified Explanation
The memory cell array described in the patent application consists of multiple memory levels stacked in a vertical direction. Each memory level includes an active region, a cell transistor with a single gate above the active region, and a cell capacitor with a bottom electrode layer connected to the active region.
- Memory cell array with multiple stacked memory levels
- Each memory level has an active region
- Cell transistor with a single gate above the active region
- Cell capacitor with a bottom electrode layer connected to the active region
Potential Applications
The technology described in this patent application could be applied in:
- Solid-state drives
- High-performance computing
- Data centers
Problems Solved
This technology helps address the following issues:
- Increasing memory density
- Enhancing memory performance
- Improving data storage efficiency
Benefits
The benefits of this technology include:
- Higher memory capacity
- Faster data access speeds
- More efficient data storage
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Memory chip manufacturing
- Electronics industry
- Semiconductor market
Possible Prior Art
One possible prior art related to this technology is the use of stacked memory levels in memory cell arrays to increase memory density and performance.
Unanswered Questions
How does this technology compare to existing memory cell array designs in terms of power consumption?
This article does not provide information on the power consumption of the memory cell array compared to existing designs.
What are the potential challenges in implementing this technology on a large scale in commercial products?
The article does not address the potential challenges that may arise when implementing this technology on a large scale in commercial products.
Original Abstract Submitted
A memory cell array includes a plurality of memory levels stacked in a first direction, each of the plurality of memory levels including an active region, a cell transistor having a single gate above the active region in the first direction, and a cell capacitor having a bottom electrode layer that is electrically connected to the active region.
