18236748. EDGE RING, DRY ETCHING APPARATUS HAVING THE SAME, AND OPERATION METHOD OF ETCHING APPARATUS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
EDGE RING, DRY ETCHING APPARATUS HAVING THE SAME, AND OPERATION METHOD OF ETCHING APPARATUS
Organization Name
Inventor(s)
Hyun-Sik Hwang of Suwon-si (KR)
Jinyoung Bang of Suwon-si (KR)
EDGE RING, DRY ETCHING APPARATUS HAVING THE SAME, AND OPERATION METHOD OF ETCHING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18236748 titled 'EDGE RING, DRY ETCHING APPARATUS HAVING THE SAME, AND OPERATION METHOD OF ETCHING APPARATUS
Simplified Explanation
The abstract describes a dry etching apparatus for processing substrates using a combination of hydrogen gas and fluorocarbon gas in a plasma environment. The apparatus includes an electrostatic chuck, an edge ring with an adhesive gel pad, and a coating layer on the edge ring exposed to the plasma.
- Electrostatic chuck supports the substrate during processing
- Edge ring supports the edge region of the substrate
- Adhesive gel pad provides cushioning between the chuck and edge ring
- Coating layer on the edge ring protects it from the plasma
Potential Applications
- Semiconductor manufacturing
- Microelectronics fabrication
- Thin film deposition processes
Problems Solved
- Damage to substrate edges during etching
- Uniformity issues in plasma processing
- Contamination of substrates during processing
Benefits
- Improved edge protection for substrates
- Enhanced process uniformity
- Reduced contamination risks
Original Abstract Submitted
A dry etching apparatus includes a process chamber; a support provided in the process chamber and configured to support a substrate; a gas supply configured to supply a process gas including a hydrogen gas (H2) and a fluorocarbon gas (CxFy) into the process chamber; a plasma source configured to generate plasma using the process gas in the process chamber, wherein the support includes: an electrostatic chuck on which the substrate is disposed; an edge ring provided along a circumference of the electrostatic chuck and supporting an edge region of the substrate; an adhesive gel pad provided between the electrostatic chuck and the edge ring; and a coating layer formed only on a surface of the edge ring, which is exposed to the plasma.
