18236265. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
Integrated Assemblies and Methods of Forming Integrated Assemblies
Organization Name
Inventor(s)
David K. Hwang of Boise ID (US)
Richard J. Hill of Boise ID (US)
Gurtej S. Sandhu of Boise ID (US)
Integrated Assemblies and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract
This abstract first appeared for US patent application 18236265 titled 'Integrated Assemblies and Methods of Forming Integrated Assemblies
Simplified Explanation
The abstract describes an integrated assembly with an upwardly-extending structure that has a sidewall surface. Two-dimensional material is present along the sidewall surface, with first and second electrostatic-doping materials adjacent to lower and upper regions of the two-dimensional material, respectively. Insulative material is present in the central region of the two-dimensional material, and a conductive gate structure is positioned over the first electrostatic-doping material and adjacent to the insulative material.
- Integrated assembly with an upwardly-extending structure and a sidewall surface
- Two-dimensional material extends along the sidewall surface
- First electrostatic-doping material is adjacent to the lower region of the two-dimensional material
- Insulative material is adjacent to the central region of the two-dimensional material
- Second electrostatic-doping material is adjacent to the upper region of the two-dimensional material
- Conductive gate structure is positioned over the first electrostatic-doping material and adjacent to the insulative material
Potential Applications
- Semiconductor devices
- Electronics manufacturing
- Nanotechnology research
Problems Solved
- Provides a structure for integrated assemblies with improved performance and functionality
- Enables precise control of electrical properties in two-dimensional materials
- Facilitates the development of advanced semiconductor devices
Benefits
- Enhanced performance and functionality of integrated assemblies
- Improved control over electrical properties in two-dimensional materials
- Enables the creation of more advanced and efficient semiconductor devices
Original Abstract Submitted
Some embodiments include an integrated assembly having an upwardly-extending structure with a sidewall surface. Two-dimensional-material extends along the sidewall surface. First electrostatic-doping-material is adjacent a lower region of the two-dimensional-material, insulative material is adjacent a central region of the two-dimensional-material, and second electrostatic-doping-material is adjacent an upper region of the two-dimensional-material. A conductive-gate-structure is over the first electrostatic-doping-material and adjacent to the insulative material. Some embodiments include methods of forming integrated assemblies.
