18236143. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Taehyuk Kim of Suwon-si (KR)

Taegyu Kang of Suwon-si (KR)

Seokho Shin of Suwon-si (KR)

Kiseok Lee of Suwon-si (KR)

Sangho Lee of Suwon-si (KR)

Keunnam Kim of Suwon-si (KR)

Seokhan Park of Suwon-si (KR)

Joongchan Shin of Suwon-si (KR)

Moonyoung Jeong of Suwon-si (KR)

Eunju Cho of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18236143 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the patent application includes:

• Substrate
• Bit line extending on the substrate in a first direction
• First and second active patterns on the bit line
• Back-gate electrode between the first and second active patterns, extending across the bit line in a second direction perpendicular to the first direction
• First word line extending at one side of the first active pattern in the second direction
• Second word line extending at the other side of the second active pattern in the second direction
• Contact pattern connected to each of the first and second active patterns, consisting of an epitaxial growth layer, a doped polysilicon layer, and a silicide layer

Potential applications of this technology:

• Semiconductor manufacturing
• Memory devices
• Integrated circuits

Problems solved by this technology:

• Improved performance and efficiency of semiconductor devices
• Enhanced connectivity and functionality in electronic devices

Benefits of this technology:

• Higher speed and reliability in data processing
• Increased integration density on semiconductor chips
• Enhanced overall performance of electronic devices

Original Abstract Submitted

A semiconductor device includes a substrate, a bit line extending on the substrate in a first direction, first and second active patterns on the bit line, a back-gate electrode between the first and second active patterns and extending across the bit line and in a second direction that is perpendicular to the first direction, a first word line extending in the second direction at one side of the first active pattern, a second word line extending in the second direction at the other side of the second active pattern, and a contact pattern connected to each of the first and second active patterns, wherein the contact pattern sequentially includes an epitaxial growth layer, a doped polysilicon layer, and a silicide layer.