18235848. ZQ CALIBRATION CIRCUIT, OPERATION METHOD OF THE ZQ CALIBRATION CIRCUIT, AND SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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ZQ CALIBRATION CIRCUIT, OPERATION METHOD OF THE ZQ CALIBRATION CIRCUIT, AND SEMICONDUCTOR MEMORY DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Donggun An of Suwon-si (KR)

Jaehyeok Baek of Suwon-si (KR)

Sungyong Cho of Suwon-si (KR)

Moonchul Choi of Suwon-si (KR)

ZQ CALIBRATION CIRCUIT, OPERATION METHOD OF THE ZQ CALIBRATION CIRCUIT, AND SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18235848 titled 'ZQ CALIBRATION CIRCUIT, OPERATION METHOD OF THE ZQ CALIBRATION CIRCUIT, AND SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The ZQ calibration circuit in a semiconductor memory device selects a reference voltage from two options based on supply voltages, generates pull-up and pull-down codes, and toggles the selection signal accordingly.

  • The reference voltage selector outputs a reference voltage chosen from a first and second reference voltage based on supply voltages.
  • The ZQ engine generates pull-up and pull-down codes based on the selected reference voltage.
  • The loop selector toggles the selection signal based on the pull-up and pull-down codes.

Potential Applications

This technology can be applied in various semiconductor memory devices to calibrate and optimize performance.

Problems Solved

1. Ensures accurate calibration of the memory device. 2. Improves overall efficiency and reliability of the memory system.

Benefits

1. Enhanced performance and reliability of semiconductor memory devices. 2. Simplified calibration process for memory systems.

Potential Commercial Applications

Optimizing memory performance in consumer electronics, data centers, and other computing devices.

Possible Prior Art

There may be prior art related to calibration circuits in semiconductor memory devices, but specific examples are not provided in this context.

Unanswered Questions

How does this technology compare to existing calibration methods in terms of accuracy and efficiency?

The article does not provide a direct comparison with existing calibration methods.

Are there any limitations or drawbacks to implementing this ZQ calibration circuit in semiconductor memory devices?

The article does not address any potential limitations or drawbacks of this technology.


Original Abstract Submitted

A ZQ calibration circuit included in a semiconductor memory device includes a reference voltage selector configured to output a reference voltage selected from among a first reference voltage and a second reference voltage generated based on a first supply voltage and a second supply voltage, in response to a selection signal, a ZQ engine configured to generate a pull-up code and a pull-down code based on the selected reference voltage, and a loop selector configured to output the selection signal according to whether each of the pull-up code and the pull-down code is toggled. Levels of the first and second reference voltages are different from each other, smaller than a level of the first supply voltage, and greater than a level of the second supply voltage.