18235766. INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) MEMORY ARRAY simplified abstract (Intel Corporation)

INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) MEMORY ARRAY

Organization Name

Intel Corporation

Inventor(s)

Nanda Kumar Chakravarthi of Fremont CA (US)

Kwame Nkrumah Eason of East Palo Alto CA (US)

Abhinav Tripathi of San Jose CA (US)

Ebony Lynn Mays of Morgan Hill CA (US)

Jessica Sevanne Kachian of Half Moon Bay CA (US)

Ralf Buengener of San Jose CA (US)

INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) MEMORY ARRAY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18235766 titled 'INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) MEMORY ARRAY

Simplified Explanation

The abstract describes a memory array with integrated word line (WL) contact structures. The memory array includes multiple WLs, each with a WL contact structure. The WL contact structure consists of a first WL contact and a second WL contact, with the second WL contact nested within the first WL contact. An isolation material separates the second WL contact from the first WL contact, preventing contact between them. In one example, the second WL contact extends through a hole in the first WL to reach the second WL.

• The memory array includes integrated word line (WL) contact structures.
• The WL contact structure consists of a first WL contact and a second WL contact.
• The second WL contact is nested within the first WL contact.
• An isolation material isolates the second WL contact from the first WL contact.
• The second WL contact extends through a hole in the first WL to reach the second WL.
• The isolation material prevents contact between the second WL contact and the sidewalls of the hole in the first WL.

Potential Applications

• Memory arrays in electronic devices
• Integrated circuits
• Data storage systems

Problems Solved

• Efficient integration of word line contact structures in memory arrays
• Prevention of contact between word line contacts
• Isolation of word line contacts from sidewalls of holes

Benefits

• Improved memory array design
• Enhanced performance and reliability of memory arrays
• Simplified manufacturing process

Original Abstract Submitted

A memory array including integrated word line (WL) contact structures are disclosed. The memory array comprises a plurality of WLs that includes at least a first WL and a second WL. An integrated WL contact structure includes a first WL contact and a second WL contact for the first WL and the second WL, respectively. The second WL contact extends through the first WL contact. For example, the second WL contact is nested within the first WL contact. An intervening isolation material isolates the second WL contact from the first WL contact. In an example, the second WL contact extends through a hole in the first WL to reach the second WL. The isolation material isolates the second WL contact from sidewalls of the hole in the first WL.