18234029. SEMICONDUCTOR DEVICE WITH CONDUCTIVE CAP LAYER OVER CONDUCTIVE PLUG AND METHOD FOR PREPARINGING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)

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SEMICONDUCTOR DEVICE WITH CONDUCTIVE CAP LAYER OVER CONDUCTIVE PLUG AND METHOD FOR PREPARINGING THE SAME

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

HUNG-CHI Tsai of NEW TAIPEI CITY (TW)

SEMICONDUCTOR DEVICE WITH CONDUCTIVE CAP LAYER OVER CONDUCTIVE PLUG AND METHOD FOR PREPARINGING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18234029 titled 'SEMICONDUCTOR DEVICE WITH CONDUCTIVE CAP LAYER OVER CONDUCTIVE PLUG AND METHOD FOR PREPARINGING THE SAME

Simplified Explanation

The present disclosure describes a semiconductor device that includes various components such as a semiconductor substrate, word lines, mask layers, spacers, a conductive plug, a conductive cap layer, and a dielectric layer.

  • The word lines are placed over the semiconductor substrate.
  • The mask layers are positioned over the word lines.
  • The spacers are located on the sidewalls of both the word lines and the mask layers.
  • A conductive plug is placed between the word lines.
  • A conductive cap layer is placed over the conductive plug.
  • A dielectric layer is placed over the word lines and spacers.
  • Each spacer consists of an inner spacer, an outer spacer, and an air gap.
  • The inner spacer is in contact with the respective word line and mask layer.
  • An air gap is present between the inner spacer and the outer spacer.

Potential applications of this technology:

  • This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
  • It can be utilized in memory devices, processors, and other integrated circuits.

Problems solved by this technology:

  • The described semiconductor device helps in improving the performance and efficiency of electronic devices.
  • It addresses the need for smaller and more compact semiconductor components.

Benefits of this technology:

  • The use of spacers and air gaps helps in reducing interference and improving signal integrity.
  • The conductive cap layer and dielectric layer provide protection and insulation to the underlying components.
  • This technology enables the fabrication of smaller and more efficient semiconductor devices.


Original Abstract Submitted

The present disclosure relates to a semiconductor device including a semiconductor substrate, word lines, mask layers, spacers, a conductive plug, a conductive cap layer, and a dielectric layer. The word lines are disposed over the semiconductor substrate. The mask layers are disposed over the plurality of word line, respectively. The spacers are disposed over opposite sidewalls of the word lines and opposite sidewalls of the mask layers, respectively. The conductive plug is disposed between the word lines. The conductive cap layer is disposed over the conductive plug. The dielectric layer is disposed over the word lines and the spacers. Each of the spacers includes an inner spacer, an outer spacer, and an air gap. The inner spacer is in contact with the respective word line and the respective mask layer. The air gap is disposed between the inner spacer and the outer spacer.

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