18233061. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Jongyoung Park of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18233061 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes a first active pattern on a substrate, a first conductive filling pattern, a gate structure, and a bit line structure.
- The first active pattern extends in a third direction at an acute angle with respect to a first direction and a second direction.
- The first conductive filling pattern is on the upper surface of the first active pattern and has a parallelogram shape.
- The gate structure extends in the first direction in the upper portion of the first active pattern.
- The bit line structure is on the first conductive filling pattern and extends in the second direction.
Potential Applications
- Semiconductor manufacturing
- Integrated circuits
- Memory devices
Problems Solved
- Efficient use of space on a semiconductor device
- Improved performance of the device
- Enhanced functionality of integrated circuits
Benefits
- Higher density of components on the device
- Increased speed and efficiency of data processing
- Enhanced reliability and durability of the semiconductor device
Original Abstract Submitted
A semiconductor device includes a first active pattern on a substrate, the first active pattern extending in a third direction having an acute angle with respect to a first direction and a second direction, the first direction and the second direction being substantially parallel to an upper surface of the substrate and substantially perpendicular to each other, a first conductive filling pattern on an upper surface of a central portion of the first active pattern, the first conductive filling pattern having a shape of a parallelogram, a gate structure extending in the first direction in an upper portion of the first active pattern, and a bit line structure on the first conductive filling pattern and extending in the second direction.
