18232568. VERTICAL MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 VERTICAL MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL MEMORY DEVICE
Organization Name
Inventor(s)
VERTICAL MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18232568 titled 'VERTICAL MEMORY DEVICE
Simplified Explanation
The abstract describes a vertical memory device with specific sub-semiconductor patterns and common source contacts. The device includes a substrate with two regions of different widths, each covered by a sub-semiconductor pattern with varying thicknesses. The common source contacts are located on the edges of the patterns.
- The device includes a substrate with two regions of different widths.
- Sub-semiconductor patterns cover each region with varying thicknesses.
- Common source contacts are located on the edges of the patterns.
Potential Applications
This technology could be applied in:
- Memory devices
- Semiconductor manufacturing
Problems Solved
This technology helps address:
- Efficient use of space on a substrate
- Enhanced performance of memory devices
Benefits
The benefits of this technology include:
- Improved memory device performance
- Optimal use of substrate space
Potential Commercial Applications
A potential commercial application for this technology could be in:
- Memory chip manufacturing
Possible Prior Art
One possible prior art for this technology could be:
- Vertical memory devices with common source contacts
Unanswered Questions
How does this technology compare to existing memory devices?
This article does not provide a direct comparison to existing memory devices, leaving the reader to wonder about the specific advantages of this new technology.
What are the specific manufacturing processes involved in creating this vertical memory device?
The article does not delve into the detailed manufacturing processes involved in creating this vertical memory device, leaving the reader curious about the specific steps and techniques used.
Original Abstract Submitted
A vertical memory device includes a substrate, first and second sub-semiconductor patterns, first and second common source contacts, and first and second cell structures. The substrate includes a first region and a second region having a same length as the first region in a first direction, the first region having a first width in a second direction perpendicular to the first direction, and the second region having a second width in the second direction that is less than the first width. The first sub-semiconductor pattern covers the first region, and a portion of the first sub-semiconductor pattern has a first thickness. The second sub-semiconductor pattern covers the second region and has a second thickness that is less than the first thickness. The first and second common source contacts are disposed on edges in the second direction of the first and second patterns, respectively.
