18228291. MEMORY DEVICE PRODUCING METADATA CHARACTERIZING APPLIED READ VOLTAGE LEVEL WITH RESPECT TO VOLTAGE DISTRIBUTIONS simplified abstract (Micron Technology, Inc.)

From WikiPatents
Jump to navigation Jump to search

MEMORY DEVICE PRODUCING METADATA CHARACTERIZING APPLIED READ VOLTAGE LEVEL WITH RESPECT TO VOLTAGE DISTRIBUTIONS

Organization Name

Micron Technology, Inc.

Inventor(s)

Dung Viet Nguyen of San Jose CA (US)

Patrick R. Khayat of San Diego CA (US)

Sivagnanam Parthasarathy of Carlsbad CA (US)

Zhengang Chen of San Jose CA (US)

Dheeraj Srinivasan of San Jose CA (US)

MEMORY DEVICE PRODUCING METADATA CHARACTERIZING APPLIED READ VOLTAGE LEVEL WITH RESPECT TO VOLTAGE DISTRIBUTIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18228291 titled 'MEMORY DEVICE PRODUCING METADATA CHARACTERIZING APPLIED READ VOLTAGE LEVEL WITH RESPECT TO VOLTAGE DISTRIBUTIONS

Simplified Explanation

The patent application describes memory devices that generate metadata indicating the read voltage level in relation to voltage distributions.

  • Memory sub-system includes a memory device with multiple memory cells and a controller.
  • The controller performs operations such as conducting read strobes using a read voltage level on a subset of memory cells.
  • The memory device provides metadata values reflecting the read voltage level with respect to threshold voltage distributions of the subset of memory cells.
  • The metadata values indicate the conductive state of bitlines connected to the subset of memory cells.

---

      1. Potential Applications
  • Memory devices with improved performance and reliability.
  • Enhanced data storage systems with better error correction capabilities.
      1. Problems Solved
  • Accurate characterization of read voltage levels in memory devices.
  • Improved understanding of threshold voltage distributions in memory cells.
      1. Benefits
  • Higher data integrity and reliability in memory operations.
  • Enhanced performance and efficiency in memory systems.


Original Abstract Submitted

Described are memory devices producing metadata characterizing the applied read voltage level with respect to voltage distributions. An example memory sub-system comprises: a memory device comprising a plurality of memory cells; and a controller coupled to the memory device, the controller to perform operations comprising: performing, using a read voltage level, a read strobe with respect to a subset of the plurality of memory cells; and receiving, from the memory device, one or more metadata values characterizing the read voltage level with respect to threshold voltage distributions of the subset of the plurality of memory cells, wherein the one or more metadata values reflect a conductive state of one or more bitlines connected to the subset of the plurality of memory cells.

Retrieved from "http://wikipatents.org/index.php?title=18228291._MEMORY_DEVICE_PRODUCING_METADATA_CHARACTERIZING_APPLIED_READ_VOLTAGE_LEVEL_WITH_RESPECT_TO_VOLTAGE_DISTRIBUTIONS_simplified_abstract_(Micron_Technology,_Inc.)&oldid=36385"