18227469. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Young Woo Kim of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18227469 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes a cell gate structure in the substrate, a bit line structure crossing the cell gate structure, and an information storage connected to the active region.
- The cell gate structure extends in a first direction and includes a cell gate trench, a cell gate insulating layer, a cell gate electrode, a cell gate conductive layer, and a cell gate capping pattern.
- The cell gate insulating layer has an insertion portion, a lower portion in contact with the cell gate conductive layer, and an upper portion in contact with the cell gate capping pattern.
Potential Applications
This technology could be applied in:
- Memory devices
- Integrated circuits
Problems Solved
- Improved memory storage capacity
- Enhanced data processing speed
Benefits
- Higher performance in semiconductor memory devices
- Increased efficiency in data storage and retrieval
Potential Commercial Applications
Optimizing Semiconductor Memory Devices for Enhanced Performance
Possible Prior Art
There may be prior art related to semiconductor memory devices with similar cell gate structures and bit line configurations.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and capacity?
The abstract does not provide specific details on the performance comparison between this technology and existing memory devices.
What are the potential challenges in implementing this technology on a larger scale for commercial production?
The abstract does not address the scalability and production challenges that may arise when implementing this technology on a commercial scale.
Original Abstract Submitted
A semiconductor memory device, including a substrate including an active region, a cell gate structure in the substrate and extended in a first direction, the cell gate structure including a cell gate trench, a cell gate insulating layer along an inner wall of the cell gate trench, a cell gate electrode on the cell gate insulating layer, a cell gate conductive layer on the cell gate electrode and a cell gate capping pattern filling the cell gate trench, a bit line structure crossing the cell gate structure, and an information storage connected to the active region, wherein the cell gate insulating layer includes an insertion portion between the cell gate conductive layer and the cell gate capping pattern, a lower portion in contact with the cell gate conductive layer, and an upper portion in contact with the cell gate capping pattern.
