18220971. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Dongick Anthony Lee of Suwon-si (KR)
Sangcheol Last Name Not Provide of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18220971 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes a base layer made of silicon material. It also includes a field effect transistor on one surface of the base layer, covered by a first insulating interlayer. A buried vertical rail passes through the first insulating interlayer and the base layer, consisting of a metal pattern surrounded by a barrier pattern. On the second surface of the base layer, there is a first lower insulating interlayer, and a lower contact plug passes through it to directly contact the lower surface of the buried vertical rail. The lower contact plug consists of a metal pattern surrounded by a barrier pattern. The first metal pattern and the second metal pattern directly contact each other.
- The semiconductor device includes a field effect transistor and a buried vertical rail, which are important components in electronic devices.
- The use of insulating interlayers and contact plugs allows for efficient and reliable connections between different layers of the device.
- The metal patterns and barrier patterns surrounding them provide protection and stability to the connections.
- The direct contact between the first and second metal patterns ensures a strong and reliable electrical connection.
Potential Applications
- This semiconductor device can be used in various electronic devices, such as smartphones, computers, and tablets.
- It can be applied in integrated circuits, memory devices, and microprocessors.
Problems Solved
- The device solves the problem of efficient and reliable connections between different layers of a semiconductor device.
- It addresses the need for strong and stable electrical connections in electronic devices.
Benefits
- The device provides improved performance and reliability in electronic devices.
- It allows for more efficient use of space in semiconductor devices.
- The direct contact between metal patterns ensures a low resistance connection, improving overall device performance.
Original Abstract Submitted
A semiconductor device includes a base layer including a silicon material. A field effect transistor is disposed on a first surface of the base layer. A first insulating interlayer covers the field effect transistor, A buried vertical rail passes through the first insulating interlayer and the base layer. The buried vertical rail includes a first metal pattern and a first barrier pattern surrounding a sidewall of the first metal pattern. A first lower insulating interlayer is on the second surface of the base layer. A lower contact plug passes through the first lower insulating interlayer and directly contacts a lower surface of the buried vertical rail. The lower contact plug includes a second metal pattern and a second barrier pattern surrounding a sidewall of the second metal pattern. A bottom surface of the first metal pattern and a top surface of the second metal pattern directly contact each other.
