18219229. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Kiseok Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18219229 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract includes a substrate with at least one active region defined by an isolation layer, word lines extending in a horizontal direction, bit lines at a higher vertical level than the word lines, and direct contacts connecting the bit lines to the active region.

  • Substrate with active regions defined by isolation layer
  • Word lines extending in a horizontal direction
  • Bit lines at a higher vertical level than word lines
  • Direct contacts connecting bit lines to active regions

Potential Applications

The technology described in this patent application could be applied in the development of advanced memory devices, such as DRAM or flash memory, where high-density and high-speed operation are crucial.

Problems Solved

This technology solves the problem of efficiently connecting bit lines to active regions in a semiconductor device, improving performance and reliability.

Benefits

The benefits of this technology include increased speed and efficiency in data storage and retrieval, as well as enhanced overall performance of semiconductor devices.

Potential Commercial Applications

  • "Advanced Memory Device Technology for High-Speed Data Storage and Retrieval"

Possible Prior Art

One possible prior art for this technology could be the use of traditional direct contact structures in semiconductor devices.

Unanswered Questions

How does this technology compare to existing direct contact structures in terms of performance and reliability?

This article does not provide a direct comparison with existing direct contact structures in semiconductor devices.

What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?

This article does not address the potential challenges in large-scale implementation of this technology in semiconductor manufacturing processes.


Original Abstract Submitted

A semiconductor device includes a substrate having at least one active region, the at least one active region being defined by an isolation layer, at least one word line extending in a first horizontal direction inside the substrate, the at least one word line crossing the at least one active region, at least one bit line extending in a second horizontal direction orthogonal to the first horizontal direction, the at least one bit line being at a higher vertical level than the at least one word line, and at least one direct contact electrically connecting the at least one bit line to the at least one active region, the at least one direct contact having a maximum width in a third horizontal direction, the third horizontal direction intersecting each of the first horizontal direction and the second horizontal direction at an acute angle.