18217724. SEMICONDUCTOR DEVICE INCLUDING INTERCONNECTION STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING INTERCONNECTION STRUCTURE
Organization Name
Inventor(s)
Byoungho Kwon of Suwon-si (KR)
Jonghyuk Park of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING INTERCONNECTION STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18217724 titled 'SEMICONDUCTOR DEVICE INCLUDING INTERCONNECTION STRUCTURE
Simplified Explanation
The semiconductor device described in the patent application includes multiple layers and structures that enable efficient electrical connections. Here is a simplified explanation of the abstract:
- The device consists of a lower structure, an intermediate insulating structure, an intermediate interconnection structure, an upper insulating structure, and an upper conductive pattern.
- The intermediate insulating structure has an intermediate etch-stop layer and an intermediate insulating layer.
- The intermediate insulating layer is composed of two material layers, with the second layer's upper surface aligned with the first layer's upper surface.
- The intermediate interconnection structure penetrates through the first material layer and the intermediate etch-stop layer.
- The first material layer has a higher dielectric constant compared to the second material layer.
Potential applications of this technology:
- Integrated circuits: The semiconductor device can be used in the manufacturing of integrated circuits, enabling efficient electrical connections between different layers.
- Microprocessors: This technology can enhance the performance and reliability of microprocessors by improving the electrical connections within the device.
- Memory devices: The semiconductor device can be applied in memory devices, allowing for better connectivity and data transfer.
Problems solved by this technology:
- Improved electrical connections: The patent addresses the issue of efficient electrical connections between different layers in a semiconductor device, ensuring better performance and reliability.
- Dielectric constant optimization: By utilizing materials with different dielectric constants, the patent aims to optimize the electrical properties of the device.
Benefits of this technology:
- Enhanced performance: The semiconductor device's improved electrical connections can lead to enhanced performance in various electronic applications.
- Increased reliability: By optimizing the dielectric constants of the material layers, the patent aims to improve the reliability and longevity of the device.
- Miniaturization potential: The described technology can contribute to the miniaturization of semiconductor devices, allowing for more compact and efficient electronic devices.
Original Abstract Submitted
A semiconductor device includes a lower structure; an intermediate insulating structure on the lower structure; an intermediate interconnection structure penetrating through the intermediate insulating structure; an upper insulating structure on the intermediate insulating structure and the intermediate interconnection structure; and an upper conductive pattern penetrating through the upper insulating structure and electrically connected to the intermediate interconnection structure, wherein the intermediate insulating structure includes an intermediate etch-stop layer and an intermediate insulating layer thereon, the intermediate insulating layer includes first and second intermediate material layers, the second intermediate material layer having an upper surface coplanar with an upper surface of the first intermediate material layer, the intermediate interconnection structure penetrates through the first intermediate material layer and the intermediate etch-stop layer, and a material of the first intermediate material layer has a dielectric constant that is higher than a dielectric constant of a material of the second intermediate material layer.
