18216269. SEMICONDUCTOR DEVICE INCLUDING PAD PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE INCLUDING PAD PATTERN
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE INCLUDING PAD PATTERN - A simplified explanation of the abstract
This abstract first appeared for US patent application 18216269 titled 'SEMICONDUCTOR DEVICE INCLUDING PAD PATTERN
Simplified Explanation
The semiconductor device described in the patent application consists of a lower structure, a data storage structure, and an inductor structure. The data storage structure includes vertically extending first electrodes, a second electrode on top of the first electrodes, and a dielectric layer between them. The inductor structure consists of an inductor conductive pattern at the same level as the first electrodes.
- The data storage structure includes vertically extending first electrodes.
- A second electrode is provided on top of the first electrodes.
- A dielectric layer separates the first electrodes and the second electrode.
- The inductor structure is located at the same level as the first electrodes.
Potential Applications:
- This semiconductor device could be used in memory storage systems, such as flash memory or non-volatile memory.
- It could also be applied in integrated circuits for data processing and storage.
Problems Solved:
- The device provides a compact and efficient solution for data storage and inductor functions in a semiconductor device.
- It eliminates the need for separate inductor components, reducing the overall size and complexity of the device.
Benefits:
- The integration of data storage and inductor structures in a single device saves space and simplifies manufacturing processes.
- The compact design allows for more efficient use of limited space in electronic devices.
- The device offers improved performance and reliability due to the close proximity of the data storage and inductor structures.
Original Abstract Submitted
A semiconductor device includes a lower structure, a data storage structure on the lower structure, and an inductor structure on the lower structure, where the data storage structure includes first electrodes extending in a vertical direction perpendicular to an upper surface of the lower structure, a second electrode provided on the first electrodes, and a dielectric layer between the first electrodes and the second electrode, and where the inductor structure includes an inductor conductive pattern at a level that is substantially the same as a level of the first electrodes.
