18212422. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Chang Sik Kim of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18212422 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes a unique structure with two channel patterns on a bit-line, each containing a different metal oxide composition. This design allows for improved memory storage and retrieval capabilities.
- The semiconductor memory device includes a substrate, a bit-line, first and second channel patterns, first and second word-lines, and capacitors.
- The first and second channel patterns are made up of different metal oxide compositions, providing enhanced memory performance.
- The first and second word-lines intersect the first direction of the bit-line, creating a complex yet efficient memory structure.
Potential Applications
This technology could be applied in various memory storage devices, such as solid-state drives, smartphones, and digital cameras.
Problems Solved
This innovation addresses the need for increased memory capacity and faster data access speeds in semiconductor memory devices.
Benefits
The unique structure of this semiconductor memory device allows for improved memory performance, increased storage capacity, and faster data retrieval.
Potential Commercial Applications
This technology could be utilized in the production of next-generation memory devices, leading to advancements in various industries such as consumer electronics and data storage.
Possible Prior Art
One possible prior art could be the use of different metal oxide compositions in memory devices to enhance performance. However, the specific structure and design of this semiconductor memory device may be a novel innovation.
Unanswered Questions
How does this technology compare to existing memory devices on the market?
This article does not provide a direct comparison between this technology and existing memory devices in terms of performance, cost, or efficiency.
What are the potential challenges or limitations of implementing this technology in practical applications?
The article does not address any potential challenges or limitations that may arise when implementing this technology in real-world applications.
Original Abstract Submitted
A semiconductor memory device includes a substrate; a bit-line on the substrate and extending in a first direction; first and second channel patterns on the bit-line; the second channel pattern being spaced apart from the first channel pattern in the first direction; a first word-line between the first and second channel patterns and extending in a second direction that intersects the first direction; a second word-line between the first and second channel patterns, extending in the second direction, and being spaced apart from the first word-line in the first direction; capacitors on and connected to the channel patterns; wherein the first and second channel patterns include first and second metal oxide patterns sequentially on the bit-line, each of the first and second metal oxide patterns include an amorphous metal oxide, and a composition of the first metal oxide pattern is different from a composition of the second metal oxide pattern.
