18210796. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18210796 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a semiconductor device that includes various patterns and structures on a substrate. Here is a simplified explanation of the patent application:
- An active pattern protrudes from the upper surface of the substrate in a vertical direction.
- An isolation pattern covers the sidewall of the active pattern.
- An epitaxial layer, made of single crystalline silicon doped with impurities, is on top of the active pattern.
- An impurity region, containing impurities, is located beneath the epitaxial layer in a portion of the active pattern.
- A conductive filling pattern is present on the epitaxial layer.
- A spacer structure is on the sidewall of the conductive filling pattern.
- A bit line structure is on top of the conductive filling pattern.
Potential applications of this technology:
- Semiconductor devices for various electronic applications.
- Integrated circuits for computing, communication, and other electronic systems.
Problems solved by this technology:
- Improved performance and functionality of semiconductor devices.
- Enhanced integration and miniaturization of electronic components.
Benefits of this technology:
- Higher efficiency and speed of electronic devices.
- Increased density and capacity of integrated circuits.
- Improved reliability and durability of semiconductor devices.
Original Abstract Submitted
A semiconductor device includes an active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to the upper surface of the substrate, an isolation pattern covering a sidewall of the active pattern, an epitaxial layer on the active pattern and including single crystalline silicon doped with impurities, an impurity region in a portion of the active pattern under the epitaxial layer and including impurities, a conductive filling pattern on the epitaxial layer, a spacer structure on a sidewall of the conductive filling pattern, and a bit line structure on the conductive filling pattern.
