18208263. THIN FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR FABRICATING THE TRANSISTOR ARRAY SUBSTRATE simplified abstract (Samsung Display Co., Ltd.)

THIN FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR FABRICATING THE TRANSISTOR ARRAY SUBSTRATE

Organization Name

Samsung Display Co., Ltd.

Inventor(s)

Sung Gwon Moon of Yongin-si (KR)

Dong Han Kang of Yongin-si (KR)

Jee Hoon Kim of Yongin-si (KR)

Seung Sok Son of Yongin-si (KR)

Shin Hyuk Yang of Yongin-si (KR)

Woo Geun Lee of Yongin-si (KR)

THIN FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR FABRICATING THE TRANSISTOR ARRAY SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18208263 titled 'THIN FILM TRANSISTOR, TRANSISTOR ARRAY SUBSTRATE, AND METHOD FOR FABRICATING THE TRANSISTOR ARRAY SUBSTRATE

Simplified Explanation

The patent application describes a transistor array substrate with an active layer containing a channel region, a source region, and a drain region, as well as a gate insulating layer, gate electrode, source electrode, and drain electrode.

• The active layer is made of an oxide semiconductor with crystals and is shaped like an island.
• The gate electrode overlaps the channel region and is part of an electrode conductive layer on the gate insulating layer.
• The source electrode and drain electrode are also part of the electrode conductive layer and are in contact with the source and drain regions of the active layer.

Potential Applications

This technology could be used in the manufacturing of advanced electronic devices such as displays, sensors, and integrated circuits.

Problems Solved

This technology solves the problem of improving the performance and efficiency of transistors in electronic devices by using an active layer made of an oxide semiconductor with crystals.

Benefits

The benefits of this technology include enhanced transistor performance, increased device efficiency, and potentially lower power consumption in electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology include the production of high-quality displays, sensors, and integrated circuits for various electronic devices.

Possible Prior Art

One possible prior art for this technology could be the use of traditional silicon-based transistors in electronic devices.

How does this technology compare to traditional silicon-based transistors in terms of performance and efficiency?

This article does not directly compare the performance and efficiency of this technology with traditional silicon-based transistors. Further research or testing may be needed to determine the advantages and limitations of this technology compared to traditional transistors.

What are the potential challenges in scaling up the production of electronic devices using this technology?

The article does not address the potential challenges in scaling up the production of electronic devices using this technology. Factors such as cost, manufacturing processes, and compatibility with existing technologies could be important considerations in commercializing this innovation.

Original Abstract Submitted

A transistor array substrate includes a substrate, an active layer disposed on the substrate and including a channel region, a source region and a drain region, a gate insulating layer disposed on a part of the active layer, a gate electrode overlapping the channel region of the active layer and included in an electrode conductive layer which is disposed on the gate insulating layer, a source electrode included in the electrode conductive layer and in contact with a part of the source region of the active layer, and a drain electrode included in the electrode conductive layer and in contact with a part of the drain region of the active layer. The active layer includes an oxide semiconductor including crystals and is disposed as an island shape excluding a hole in a plan view.