18206785. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18206785 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a three-dimensional semiconductor memory device with a unique structure involving gate electrodes, interlayer insulating layers, dummy pads, source structures, and vertical channel structures.
- The device includes a substrate with a stack of interlayer insulating layers and gate electrodes stacked alternately on top.
- Each gate electrode has a dummy pad on a pad portion, with a source structure located between the substrate and the stack.
- First vertical channel structures penetrate the stack and the source structure.
- The pad portions consist of a first pad portion vertically overlapped with the dummy pad and a second pad portion horizontally overlapped with the dummy pad.
- The first and second pad portions are spaced apart from the dummy pad, with one of the interlayer insulating layers interposed between them.
- The interlayer insulating layer extends continuously from a first portion to a second portion via a connection portion.
Potential Applications
This technology could be applied in advanced semiconductor memory devices, improving their performance and efficiency.
Problems Solved
This innovation solves the problem of increasing the storage capacity and speed of semiconductor memory devices while maintaining a compact design.
Benefits
The benefits of this technology include enhanced memory device performance, increased storage capacity, and improved overall efficiency.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for developing next-generation memory devices.
Possible Prior Art
One possible prior art could be the development of three-dimensional semiconductor memory devices with similar structures but without the specific features described in this patent application.
Unanswered Questions
How does this technology compare to existing memory device structures in terms of performance and efficiency?
Answer: This article does not provide a direct comparison with existing memory device structures, so it is unclear how this technology stacks up against current solutions.
What are the manufacturing challenges associated with implementing this unique structure in semiconductor memory devices?
Answer: The article does not address the potential manufacturing challenges that may arise when producing semiconductor memory devices with this specific structure.
Original Abstract Submitted
A three-dimensional semiconductor memory device may include a substrate, a stack including interlayer insulating layers and gate electrodes alternatingly stacked on the substrate, a dummy pad on a pad portion of each gate electrode, a source structure between the substrate and the stack, and first vertical channel structures that penetrate the stack and the source structure. The pad portions may include a first pad portion vertically overlapped with the dummy pad and a second pad portion horizontally overlapped with the dummy pad. The first and second pad portions may be spaced apart from the dummy pad, and one of the interlayer insulating layers may be interposed between the first pad portion and the dummy pad. The one of the interlayer insulating layers may extend continuously from a first portion to a second portion via a connection portion.
