18202650. METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER
Organization Name
Inventor(s)
METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18202650 titled 'METHOD OF EXTRACTING PROPERTIES OF A LAYER ON A WAFER
Simplified Explanation
The method described in the abstract involves using electromagnetic waves to extract properties of a layer on a wafer. By emitting electromagnetic waves and detecting the waves that pass through and reflect off the target layer, data is obtained and analyzed to separate pulses and obtain property data of the target layer.
- Emit electromagnetic waves to the lower surface of the wafer
- Detect first electromagnetic wave passing through the target layer on the upper surface
- Detect second electromagnetic wave reflected from the target layer
- Obtain data including information about the first and second electromagnetic waves
- Separate first pulse of the first electromagnetic wave and second pulse of the second electromagnetic wave
- Obtain property data of the target layer
Potential Applications
This technology can be applied in the semiconductor industry for quality control and process optimization in wafer manufacturing.
Problems Solved
This technology helps in non-destructive testing of layers on wafers, providing valuable information without damaging the material.
Benefits
The method allows for quick and accurate extraction of properties of layers on wafers, leading to improved efficiency and quality control in manufacturing processes.
Potential Commercial Applications
"Non-Destructive Testing Method for Wafer Layers: Improving Semiconductor Manufacturing Processes"
Possible Prior Art
One possible prior art could be the use of similar methods in the field of material science for analyzing thin films and coatings on substrates.
Unanswered Questions
How does this method compare to traditional techniques for analyzing wafer layers?
This article does not provide a direct comparison to traditional techniques such as microscopy or spectroscopy.
What are the limitations of this method in terms of the types of layers it can analyze?
The article does not address the specific limitations of the method in terms of the types of materials or structures it can effectively analyze.
Original Abstract Submitted
Provided is a method of extracting properties of a layer on a wafer, the method including emitting electromagnetic waves to a lower surface of the wafer, detecting a first electromagnetic wave, that passes through a target layer on an upper surface of the wafer, and a second electromagnetic wave, that is reflected from the target layer, among the electromagnetic waves to obtain data including information about the first electromagnetic wave and the second electromagnetic wave, and separating a first pulse of the first electromagnetic wave and a second pulse of the second electromagnetic wave from each other in the data and obtaining property data of the target layer.
