View source for 18196081. SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Seokhyeon Yoon of Suwon-si (KR)|Seokhyeon Yoon of Suwon-si (KR)]][[Category:Seokhyeon Yoon of Suwon-si (KR)]]

[[:Category:Taehyeon Kim of Suwon-si (KR)|Taehyeon Kim of Suwon-si (KR)]][[Category:Taehyeon Kim of Suwon-si (KR)]]

[[:Category:Seunghun Lee of Suwon-si (KR)|Seunghun Lee of Suwon-si (KR)]][[Category:Seunghun Lee of Suwon-si (KR)]]

[[:Category:Hyeongrae Kim of Suwon-si (KR)|Hyeongrae Kim of Suwon-si (KR)]][[Category:Hyeongrae Kim of Suwon-si (KR)]]

==SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18196081 titled 'SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN

==Simplified Explanation==

The semiconductor device described in the patent application includes various components such as active patterns, gate structures, and source/drain layers. These components are arranged in a specific manner to achieve certain characteristics and functionalities.

* The first and second active patterns are located on different regions and extend in a specific direction.
* The first and second gate structures are formed on the first and second active patterns and extend in a different direction.
* The first and second source/drain layers are formed on the active patterns adjacent to the gate structures.
* The first active pattern includes a first well with first and second impurity regions.
* The second active pattern includes a second well with third and fourth impurity regions.
* The width of the first impurity region in the second direction is greater than that of the second impurity region.
* The width of the third impurity region in the second direction is smaller than that of the fourth impurity region.

Potential applications of this technology:

* Semiconductor devices with improved performance and functionality.
* Enhanced control over the flow of electrical current.
* Increased efficiency and reliability of electronic circuits.
* Suitable for various electronic devices such as smartphones, computers, and IoT devices.

Problems solved by this technology:

* Provides a more precise and controlled flow of electrical current.
* Reduces leakage and power consumption in semiconductor devices.
* Enhances the overall performance and reliability of electronic circuits.
* Enables the miniaturization and integration of complex electronic components.

Benefits of this technology:

* Improved functionality and performance of semiconductor devices.
* Increased efficiency and reduced power consumption.
* Enhanced reliability and durability of electronic circuits.
* Enables the development of smaller and more compact electronic devices.


==Original Abstract Submitted==

A semiconductor device include first and second active patterns, first and second gate structures, and first and second source/drain layers. The first and second active patterns extend on the first and second regions in a first direction. The first and second gate structures are formed on the first and second active patterns, and extend in a second direction. The first and second source/drain layers are formed on the first and second active patterns adjacent to the first and second gate structures. The first active pattern includes a first well having first and second impurity regions. The second active pattern includes a second well having third and fourth impurity regions. A width in the second direction of the first impurity region is greater than that of the second impurity region. A width in the second direction of the third impurity region is smaller than that of the fourth impurity region.



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