18194642. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
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Inventor(s)
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18194642 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
Simplified Explanation
The memory device described in the patent application includes a substrate with two adjacent active patterns separated by a trench. Each active pattern has a source/drain region. The second active pattern also has a second source/drain region, which is set back from the first source/drain region. An isolation layer is included in the trench and on the first sidewall surface. The device also includes a bit line with a contact part connected to the first source/drain region, and a contact coupled to the second source/drain region with a lower spacer between them. A landing pad and a data storage element are also included.
- The patent application describes a memory device with a unique structure and layout.
- The device includes two adjacent active patterns with separate source/drain regions.
- The second source/drain region is set back from the first source/drain region.
- An isolation layer is included in the trench and on the first sidewall surface.
- The device includes a bit line with a contact part connected to the first source/drain region.
- A contact is coupled to the second source/drain region with a lower spacer between them.
- A landing pad and a data storage element are included in the device.
Potential applications of this technology:
- Memory devices with improved performance and storage capacity.
- Integration into various electronic devices such as smartphones, computers, and tablets.
- Use in data centers and cloud computing systems for efficient data storage and retrieval.
Problems solved by this technology:
- Improved memory device layout and structure for better performance.
- Enhanced storage capacity and data retrieval speed.
- Reduction in power consumption and heat generation.
Benefits of this technology:
- Increased memory capacity and faster data access.
- Improved overall performance of electronic devices.
- Energy-efficient operation and reduced heat generation.
Original Abstract Submitted
A memory device includes a substrate having first and second active patterns adjacent to each other and separated by a trench, the first and second active patterns including a first source/drain region; the second active pattern includes a second source/drain region. The second source/drain region includes first and second sidewall surfaces adjacent the first source/drain region and a connecting surface that connects the first and second sidewall surfaces. The second sidewall surface is set back from the first sidewall surface. An isolation layer is included in the trench and on the first sidewall surface. A bit line includes a contact part connected to the first source/drain region. A contact is coupled to the second source/drain region with a lower spacer between the contact and the contact part of the bit line, a landing pad on the contact, and a data storage element on the landing pad.
