18193647. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (SK hynix Inc.)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

SK hynix Inc.

Inventor(s)

Rho Gyu Kwak of Gyeonggi-do (KR)

In Su Park of Gyeonggi-do (KR)

Jung Shik Jang of Gyeonggi-do (KR)

Seok Min Choi of Gyeonggi-do (KR)

Won Geun Choi of Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18193647 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor device described in the abstract includes first and second insulating pillars arranged in a specific configuration to accommodate first and second memory cells. Here is a simplified explanation of the patent application:

• First insulating pillars arranged in a specific direction
• Second insulating pillars arranged alternately with the first insulating pillars, with different widths in different directions
• First memory cells located between the second insulating pillars along one side of the first insulating pillars
• Second memory cells located between the second insulating pillars along the other side of the first insulating pillars

1. 1. 1. Potential Applications

This technology could be applied in the development of advanced semiconductor memory devices for various electronic applications.

1. 1. 1. Problems Solved

This technology solves the problem of efficiently stacking memory cells in a semiconductor device with a specific pillar configuration.

1. 1. 1. Benefits

The benefits of this technology include increased memory cell density and improved performance in semiconductor devices.

1. 1. 1. Potential Commercial Applications

This technology could be utilized in the production of high-density memory chips for consumer electronics, data storage, and other applications.

1. 1. 1. Possible Prior Art

One possible prior art could be the use of insulating pillars in semiconductor devices to improve memory cell stacking efficiency.

1. 1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing memory cell stacking methods in terms of performance and efficiency?

This article does not provide a direct comparison with existing memory cell stacking methods, leaving the reader to wonder about the advantages and disadvantages of this new approach.

1. 1. 1. 1. What specific electronic devices or systems could benefit the most from the implementation of this semiconductor device technology?

The article does not delve into specific examples of electronic devices or systems that could benefit from this technology, leaving the reader to speculate on potential applications.

Original Abstract Submitted

A semiconductor device may include: first insulating pillars arranged in a first direction; second insulating pillars arranged alternately with the first insulating pillars and having a first width in the first direction and a second width in a second direction intersecting the first direction, the first width being greater than the second width; first memory cells located between the second insulating pillars and stacked along a first sidewall of each of the first insulating pillars; and second memory cells located between the second insulating pillars and stacked along a second sidewall of each of the first insulating pillars.