18192799. Layer-By-Layer Formation Of Through-Substrate Via simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Layer-By-Layer Formation Of Through-Substrate Via
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Layer-By-Layer Formation Of Through-Substrate Via - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Layer-By-Layer Formation Of Through-Substrate Via
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tsung-Chieh Hsiao of Changhua County (TW)
Liang-Wei Wang of Hsinchu City (TW)
Layer-By-Layer Formation Of Through-Substrate Via - A simplified explanation of the abstract
This abstract first appeared for US patent application 18192799 titled 'Layer-By-Layer Formation Of Through-Substrate Via
Simplified Explanation
The integrated circuit (IC) device described in the patent application includes a substrate, a multi-layer interconnect structure, and through-substrate vias (TSVs) that extend vertically through the substrate.
- The IC device has a multi-layer interconnect structure with multiple metal layers.
- The TSVs consist of conductive components from the metal layers of the interconnect structure.
- The TSVs are used to provide electrical connections between different layers of the IC device.
Potential Applications
The technology described in the patent application could be used in:
- High-performance computing systems
- Advanced telecommunications equipment
- Aerospace and defense electronics
Problems Solved
The technology addresses the challenge of efficiently connecting different layers of an IC device, improving performance and reliability.
Benefits
- Enhanced electrical connectivity within the IC device
- Increased efficiency in signal transmission
- Improved overall performance of the IC device
Potential Commercial Applications
"Vertical Through-Substrate Vias for Enhanced IC Connectivity"
Possible Prior Art
One possible prior art could be the use of traditional through-silicon vias (TSVs) in IC devices to provide vertical interconnects. However, the specific integration of TSVs with a multi-layer interconnect structure as described in the patent application may be a novel approach.
Unanswered Questions
How does the technology impact the overall size of the IC device?
The article does not provide information on whether the integration of TSVs affects the size of the IC device or if it allows for more compact designs.
What are the potential challenges in manufacturing IC devices with this technology?
The article does not address any potential manufacturing challenges that may arise when implementing TSVs in IC devices, such as yield rates or production costs.
Original Abstract Submitted
An integrated circuit (IC) device includes a substrate. The IC device includes a multi-layer interconnect structure disposed over a first side of the substrate. The multi-layer interconnect structure includes a plurality of metal layers. The IC device includes a first portion of a through-substrate via (TSV) disposed over the first side of the substrate. The first portion of the TSV includes a plurality of conductive components belonging to the plurality of metal layers of the multi-layer interconnect structure. The IC device includes a second portion of the TSV that extends vertically through the substrate from the first side to a second side opposite the first side. The second portion of the TSV is electrically coupled to the first portion of the TSV.
