18192770. Forming Openings Through Carrier Substrate of IC Package Assembly for Fault Identification simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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Forming Openings Through Carrier Substrate of IC Package Assembly for Fault Identification

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kao-Chih Liu of Changhua County (TW)

Wenmin Hsu of Hsinchu (TW)

Hsuan Jung Chiu of Taichung City (TW)

Yu-Ting Lin of Hsin-Chu City (TW)

Chia Hong Lin of Hsinchu County (TW)

Forming Openings Through Carrier Substrate of IC Package Assembly for Fault Identification - A simplified explanation of the abstract

This abstract first appeared for US patent application 18192770 titled 'Forming Openings Through Carrier Substrate of IC Package Assembly for Fault Identification

Simplified Explanation

The abstract describes a patent application for a semiconductor substrate with multiple transistors. It includes a first structure with first metallization components and a carrier substrate placed over it. The first structure is sandwiched between the carrier substrate and the semiconductor substrate. The carrier substrate has openings that expose regions of the first structure on one side. On the opposite side of the semiconductor substrate, there is a second structure with second metallization components.

  • The patent application describes a semiconductor substrate with multiple transistors.
  • A first structure with first metallization components is placed over one side of the semiconductor substrate.
  • A carrier substrate is placed over the first structure, with openings that expose regions of the first structure.
  • A second structure with second metallization components is placed over the opposite side of the semiconductor substrate.

Potential Applications:

  • Integrated circuits and electronic devices that require multiple transistors.
  • Semiconductor manufacturing and fabrication processes.

Problems Solved:

  • Provides a structure for integrating multiple transistors on a semiconductor substrate.
  • Allows for efficient routing and connection of metallization components.

Benefits:

  • Enables compact and efficient design of integrated circuits.
  • Improves the performance and functionality of electronic devices.
  • Enhances the manufacturing process of semiconductor substrates.


Original Abstract Submitted

A semiconductor substrate includes a plurality of transistors. A first structure is disposed over a first side of the semiconductor substrate. The first structure contains a plurality of first metallization components. A carrier substrate is disposed over the first structure. The first structure is located between the carrier substrate and the semiconductor substrate. One or more openings extend through the carrier substrate and expose one or more regions of the first structure to the first side. A second structure is disposed over a second side of the semiconductor substrate opposite the first side. The second structure contains a plurality of second metallization components.