18191787. Forming Trench In IC Chip Through Multiple Trench Formation And Deposition Processes simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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Forming Trench In IC Chip Through Multiple Trench Formation And Deposition Processes

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kao-Chih Liu of Changhua County (TW)

Wenmin Hsu of Hsinchu (TW)

Yu-Ting Lin of Hsin-Chu City (TW)

Chia Hong Lin of Hsinchu County (TW)

ChienYi Chen of Hsinchu City (TW)

Forming Trench In IC Chip Through Multiple Trench Formation And Deposition Processes - A simplified explanation of the abstract

This abstract first appeared for US patent application 18191787 titled 'Forming Trench In IC Chip Through Multiple Trench Formation And Deposition Processes

Simplified Explanation

The abstract describes an integrated circuit (IC) chip assembly that includes an IC die with transistors, first and second structures with metallization components, and a second substrate bonded to the IC die. The assembly also includes a trench that extends through the second substrate and the second structure, with protective layers defining the sidewalls of the trench.

  • The IC chip assembly includes an IC die with transistors and metallization components.
  • The first structure is located on one side of the IC die, while the second structure is located on the opposite side.
  • The second substrate is bonded to the IC die through the second side.
  • The trench extends through the second substrate and the second structure of the IC die.
  • The sidewalls of the trench are defined, at least in part, by protective layers.

Potential Applications:

  • This technology can be used in the manufacturing of integrated circuit chip assemblies.
  • It can be applied in various electronic devices that require integrated circuits, such as smartphones, computers, and IoT devices.

Problems Solved:

  • The integration of transistors and metallization components in an IC chip assembly is facilitated.
  • The trench allows for the passage of signals or connections through the second substrate and the second structure.
  • The protective layers help to protect the sidewalls of the trench.

Benefits:

  • Improved integration of components in IC chip assemblies.
  • Enhanced signal transmission and connectivity through the trench.
  • Increased protection of the trench sidewalls with the use of protective layers.


Original Abstract Submitted

An integrated circuit (IC) chip assembly includes an integrated circuit (IC) die that includes a first substrate in which plurality of transistors is formed, a first structure that contains a plurality of first metallization components, and a second structure that contains a plurality of second metallization components. The first structure is disposed over a first side of the first substrate. The second structure is disposed over a second side of the first substrate opposite the first side. The chip assembly includes a second substrate bonded to the IC die through the second side. The chip assembly includes a trench that extends through the second substrate and through the second structure of the IC die. Sidewalls of the trench are defined at least in part by one or more protective layers.

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