18190876. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Donghoon Kwon of Suwon-si (KR)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18190876 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The abstract describes a semiconductor device with various components and structures, including circuit devices, interconnection lines, insulating layers, source structures, gate electrodes, channel structures, contact plugs, and spacer layers.
- The semiconductor device includes a substrate and circuit devices on the substrate.
- Lower interconnection lines are electrically connected to the circuit devices.
- A peripheral region insulating layer covers the lower interconnection lines.
- A source structure is located on the peripheral region insulating layer.
- Gate electrodes are stacked and spaced apart from each other in a first direction on the source structure.
- Channel structures penetrate through the gate electrodes and each include a channel layer.
- Contact plugs penetrate through the gate electrodes and the source structure, extending in the first direction, and are connected to a portion of the lower interconnection lines.
- Spacer layers are located between the contact plugs and the source structure and are made of a different material than the insulating layer in the peripheral region.
- Each spacer layer has a first width on an upper surface and a second width greater than the first width on a lower surface.
Potential applications of this technology:
- Semiconductor devices used in various electronic devices such as smartphones, computers, and tablets.
- Integrated circuits for data processing, memory storage, and signal amplification.
- Power management systems for efficient energy usage.
Problems solved by this technology:
- Provides improved electrical connectivity and insulation between different components of the semiconductor device.
- Helps in reducing signal interference and noise.
- Enhances the overall performance and reliability of the semiconductor device.
Benefits of this technology:
- Higher efficiency and performance of the semiconductor device.
- Improved signal transmission and reduced signal loss.
- Enhanced reliability and durability of the device.
- Enables miniaturization and integration of complex circuitry.
Original Abstract Submitted
A semiconductor device includes a substrate, circuit devices on the substrate, lower interconnection lines electrically connected to the circuit devices, a peripheral region insulating layer covering the lower interconnection lines, a source structure on the peripheral region insulating layer, gate electrodes stacked and spaced apart from each other in a first direction on the source structure, channel structures penetrating through the gate electrodes and each including a channel layer, contact plugs penetrating through the gate electrodes and the source structure, extending in the first direction, and connected to a portion of the lower interconnection lines, and spacer layers between the contact plugs and the source structure and including a material different from a material of the insulating layer in the peripheral region, wherein each of the spacer layers has a first width on an upper surface and has a second width greater than the first width on a lower surface.
