18190350. DEVICE AND METHOD FOR OPERATING MEMORY IN ELECTRONIC DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
DEVICE AND METHOD FOR OPERATING MEMORY IN ELECTRONIC DEVICE
Organization Name
Inventor(s)
Kyeonghwan Jung of Suwon-si (KR)
Changhyeon Chae of Suwon-si (KR)
Jaehoon Jeong of Suwon-si (KR)
DEVICE AND METHOD FOR OPERATING MEMORY IN ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18190350 titled 'DEVICE AND METHOD FOR OPERATING MEMORY IN ELECTRONIC DEVICE
Simplified Explanation
The abstract describes a memory operation device and method for operating a memory in an electronic device. The device determines if a memory leak occurs in low-order stack trace items and proceeds to higher-order stack trace items if a memory leak is found. Memory debugging is performed using the high-order stack trace item causing the memory leak.
- The device operates a memory in an electronic device.
- It checks for memory leaks in low-order stack trace items.
- If a memory leak is found, it proceeds to higher-order stack trace items.
- Memory debugging is performed using the high-order stack trace item causing the memory leak.
Potential Applications
- This technology can be applied in electronic devices with memory operations, such as computers, smartphones, and tablets.
- It can be used in software development to identify and debug memory leaks in programs.
Problems Solved
- Memory leaks can lead to inefficient memory usage and system crashes.
- Identifying the cause of memory leaks can be time-consuming and challenging.
- This technology provides a systematic approach to detect and debug memory leaks.
Benefits
- Efficiently detects and debugs memory leaks in electronic devices.
- Saves time and effort in identifying the cause of memory leaks.
- Improves overall system performance and stability.
Original Abstract Submitted
A memory operation device and method for operating a memory in an electronic device. The electronic device may determine whether a memory leak occurs in one or more low-order stack trace items with a count value of n among collected stack trace items, n being a positive integer, and, based on a low-order stack trace item among the collected stack trace items being determined as causing a memory leak, proceeding to a next order of the collected stack trace items to thereby determine whether a memory leak occurs in one or more high-order stack trace items with a count value of m which is a positive integer higher than n). When m is a maximum count value among the collected stack trace items, memory debugging may be performed using a high-order stack trace item, among the one or more high-order stack trace items, causing the memory leak.
