18189544. DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME simplified abstract (Samsung Display Co., Ltd.)

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DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME

Organization Name

Samsung Display Co., Ltd.

Inventor(s)

RAN Kim of Yongin-si (KR)

KIHYUN Kim of Yongin-si (KR)

YOUNGGIL Park of Yongin-si (KR)

DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18189544 titled 'DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME

Simplified Explanation

The patent application describes a display device with specific stress levels in different layers to optimize performance.

  • Thin film transistor with active layer, gate electrode, and electrode layer with specific stress levels
  • Light emission layer facing the thin film transistor
  • First passivation layer with a different stress level covering the thin film transistor

Potential Applications

The technology can be used in various display devices such as smartphones, tablets, TVs, and monitors.

Problems Solved

The technology helps in improving the performance and longevity of display devices by optimizing stress levels in different layers.

Benefits

- Enhanced display quality - Longer lifespan of display devices - Improved overall performance

Potential Commercial Applications

"Optimizing Stress Levels in Display Devices for Enhanced Performance"

Possible Prior Art

There may be prior art related to optimizing stress levels in different layers of display devices to improve performance and longevity.

Unanswered Questions

How does the technology impact power consumption in display devices?

The article does not address the specific impact of stress levels on power consumption in display devices.

Are there any potential drawbacks or limitations of this technology?

The article does not mention any potential drawbacks or limitations of optimizing stress levels in display devices.


Original Abstract Submitted

A display device includes a thin film transistor including an active layer, a gate electrode on the active layer, and an electrode layer having a first stress, the electrode layer including a source electrode and a drain electrode, a light emission layer facing the thin film transistor, and a first passivation layer between the thin film transistor and the light emission layer and covering the thin film transistor, the first passivation layer having a second stress. A difference between an absolute value of the first stress and an absolute value of the second stress is about 600 megapascals or less.