18188952. DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME simplified abstract (Samsung Display Co., LTD.)
Contents
DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME
Organization Name
Inventor(s)
KYONG-CHOL Lee of Yongin-si (KR)
YEONHONG Kim of Yongin-si (KR)
DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18188952 titled 'DISPLAY DEVICE AND METHOD OF PROVIDING THE SAME
Simplified Explanation
The patent application describes a display device with multiple transistors and insulating patterns for improved performance.
- First transistor with a first active pattern and first oxide semiconductor
- Second transistor with a second active pattern and a different oxide semiconductor
- Insulating patterns between active patterns and gate electrodes
- Direct contact between third gate insulating pattern, first active pattern, and first gate electrode
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- Potential Applications
- High-resolution displays
- Flexible displays
- Wearable technology
- Augmented reality devices
- Problems Solved
- Improved performance of display devices
- Enhanced reliability and durability
- Reduction of signal interference
- Benefits
- Higher quality display resolution
- Increased device flexibility
- Extended device lifespan
- Enhanced user experience
Original Abstract Submitted
A display device includes a first transistor including a first active pattern including a first oxide semiconductor, and a first gate electrode which is on the first active pattern, a second transistor including a second active pattern including a second oxide semiconductor different from the first oxide semiconductor, and a second gate electrode which is on the second active pattern, a first gate insulating pattern between the second active pattern and the second gate electrode, a second gate insulating pattern facing the first gate insulating pattern with the second active pattern therebetween, and a third gate insulating pattern between the first active pattern and the first gate electrode, the third gate insulating pattern directly contacting the first active pattern and the first gate electrode.
