18188311. THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE
Organization Name
Inventor(s)
Seungyeon Kim of Suwon-si (KR)
Takuya Futatsuyama of Suwon-si (KR)
Beakhyung Cho of Suwon-si (KR)
THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18188311 titled 'THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE
Simplified Explanation
The abstract of the patent application describes a non-volatile memory device that consists of two semiconductor layers. The first layer contains memory cells connected to bit lines and word lines, which are stacked vertically. The word lines are arranged in a stair shape and have corresponding word line pads, which are connected to word line contacts. The second layer includes pass transistors that overlap the word line pads in the vertical direction. The word line pads and pass transistors have specific dimensions in both the first and second directions.
- The patent application describes a non-volatile memory device with a unique structure and arrangement of memory cells, word lines, and pass transistors.
- The memory cells are electrically connected to bit lines and word lines, allowing for data storage and retrieval.
- The word lines are stacked vertically and arranged in a stair shape, with corresponding word line pads and contacts.
- The pass transistors in the second semiconductor layer overlap the word line pads, providing electrical connections.
- The word line pads and pass transistors have specific dimensions, known as width and pitch, in both the first and second directions.
Potential Applications of this Technology:
- Non-volatile memory devices are commonly used in various electronic devices, such as smartphones, tablets, and computers.
- The unique structure and arrangement described in the patent application may improve the performance and efficiency of non-volatile memory devices.
- This technology could be applied in the development of faster and more reliable storage solutions for electronic devices.
Problems Solved by this Technology:
- Non-volatile memory devices often face challenges related to speed, capacity, and power consumption.
- The described structure and arrangement may address these challenges by optimizing the layout and electrical connections.
- The use of pass transistors overlapping the word line pads may improve the efficiency and reliability of data storage and retrieval.
Benefits of this Technology:
- The proposed non-volatile memory device may offer improved performance, including faster data access and higher storage capacity.
- The optimized layout and electrical connections could result in reduced power consumption and improved energy efficiency.
- The unique structure and arrangement may enable the development of smaller and more compact memory devices, suitable for portable electronic devices.
Original Abstract Submitted
A non-volatile memory device includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes memory cells electrically connected to bit lines each extending in a first direction and word lines each extending in a second direction and stacked in a vertical direction, word line pads which respectively correspond to the word lines and are arranged in a stair shape, and word line contacts respectively electrically connected to the word line pads. The second semiconductor layer includes pass transistors respectively electrically connected to the word line contacts to respectively overlap the word line pads in the vertical direction. Each of the word line pads has a first width in the first direction and a second width in the second direction. Each of the pass transistors has a first pitch in the first direction and a second pitch in the second direction.
