18187609. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (SK hynix Inc.)
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Jong Gi Kim of Icheon-si Gyeonggi-do (KR)
Young Jin Noh of Icheon-si Gyeonggi-do (KR)
Jae O Park of Icheon-si Gyeonggi-do (KR)
Jin Ho Bin of Icheon-si Gyeonggi-do (KR)
Dong Chul Yoo of Icheon-si Gyeonggi-do (KR)
Yoo Il Jeon of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18187609 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The manufacturing method of a semiconductor device described in the abstract involves forming a stack with alternating layers of different materials, creating an opening in the stack, depositing a seed layer in the opening, treating the seed layer to form a buffer layer, and then oxidizing the seed layer to create a blocking layer.
- Forming a stack with alternating layers of first and second materials
- Creating an opening in the stack
- Depositing a seed layer in the opening
- Treating the seed layer to form a buffer layer
- Oxidizing the seed layer to create a blocking layer
Potential Applications
The technology described in this patent application could be applied in the manufacturing of various semiconductor devices, such as transistors, diodes, and integrated circuits.
Problems Solved
This technology addresses the need for improved methods of forming semiconductor devices with precise control over the layers and structures within the device.
Benefits
The benefits of this technology include enhanced performance, increased efficiency, and potentially lower production costs for semiconductor devices.
Potential Commercial Applications
The technology could find commercial applications in the semiconductor industry for the production of advanced electronic devices with improved performance and reliability.
Possible Prior Art
One possible prior art in this field could be the use of similar layering techniques in the manufacturing of semiconductor devices, but the specific combination of steps described in this patent application may be novel.
Unanswered Questions
How does the oxidation process affect the properties of the blocking layer in the semiconductor device?
The article does not delve into the specific effects of the oxidation process on the blocking layer and how it contributes to the overall functionality of the device.
What are the potential challenges or limitations of implementing this manufacturing method on a large scale?
The article does not address the scalability of this manufacturing method or any potential obstacles that may arise when applying it in mass production settings.
Original Abstract Submitted
A manufacturing method of a semiconductor device may include: forming a stack comprising first material layers and second material layers that are alternately stacked; forming an opening in the stack; forming a first seed layer in the opening; forming a first buffer layer by surface-treating the first seed layer; and forming a blocking layer by oxidizing the first seed layer through the first buffer layer.
