18184480. THICK REDISTRIBUTION LAYER FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
THICK REDISTRIBUTION LAYER FEATURES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chia-Feng Cheng of Tainan City (TW)
Kang-Yi Lien of Tainan City (TW)
Chia-Ping Lai of Hsinchu City (TW)
THICK REDISTRIBUTION LAYER FEATURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18184480 titled 'THICK REDISTRIBUTION LAYER FEATURES
Simplified Explanation
The semiconductor structure described in the patent application includes a metal feature in a dielectric layer, a passivation structure, a contact pad, and multiple contact vias.
- Metal feature embedded in dielectric layer
- Passivation structure covering metal feature and dielectric layer
- Contact pad positioned over passivation structure
- Contact vias extending through passivation structure to connect metal feature and contact pad
Potential Applications
The technology described in this patent application could be used in various electronic devices and systems that require efficient and reliable semiconductor structures, such as:
- Integrated circuits
- Microprocessors
- Memory devices
- Sensors
Problems Solved
This innovation addresses several issues in semiconductor manufacturing and device performance, including:
- Improving electrical connectivity between metal features and contact pads
- Enhancing reliability and durability of semiconductor structures
- Reducing signal interference and crosstalk in electronic devices
Benefits
Implementing the semiconductor structure outlined in this patent application offers several advantages, such as:
- Increased efficiency and performance of electronic devices
- Enhanced signal transmission and connectivity
- Improved overall reliability and longevity of semiconductor components
Original Abstract Submitted
Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a metal feature in a dielectric layer, a passivation structure over the dielectric layer and the metal feature, a contact pad over the passivation structure, and a plurality of contact vias extending through the passivation structure and in contact with the metal feature and the contact pad.
