18184329. SEMICONDUCTOR STORAGE DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

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SEMICONDUCTOR STORAGE DEVICE

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Tsuyoshi Midorikawa of Yokohama Kanagawa (JP)

SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18184329 titled 'SEMICONDUCTOR STORAGE DEVICE

Simplified Explanation

A semiconductor storage device described in the abstract includes a first memory circuit, a second memory circuit with a smaller storage capacity, a readout line connected to both memory circuits, a sense amplifier to compare voltage levels of signals from each memory circuit, and a readout conditioning circuit to adjust operation timing and reference voltage based on the signals.

  • The semiconductor storage device comprises a first memory circuit and a second memory circuit with different storage capacities.
  • A readout line is shared between the first and second memory circuits for data retrieval.
  • A sense amplifier compares voltage levels of signals from each memory circuit.
  • A readout conditioning circuit adjusts operation timing and reference voltage based on the signals.

Potential Applications

This technology could be applied in various electronic devices requiring efficient and reliable semiconductor storage, such as smartphones, tablets, and digital cameras.

Problems Solved

This innovation addresses the challenge of optimizing storage capacity in semiconductor devices while maintaining data retrieval accuracy and speed.

Benefits

The semiconductor storage device offers a cost-effective solution for integrating multiple memory circuits with different capacities, enhancing overall performance and storage efficiency.

Potential Commercial Applications

The "Semiconductor Storage Device" technology can be utilized in consumer electronics, automotive systems, and industrial equipment for improved data storage and processing capabilities.

Possible Prior Art

One potential prior art could be the development of multi-level cell (MLC) NAND flash memory, which also involves storing multiple bits per memory cell to increase storage capacity.

Unanswered Questions

1. How does the readout conditioning circuit precisely adjust the operation timing and reference voltage for optimal data retrieval? 2. Are there any limitations or drawbacks to integrating memory circuits with different storage capacities in semiconductor devices?


Original Abstract Submitted

A semiconductor storage device according to an embodiment comprises: a first memory circuit; a second memory circuit having a storage capacity smaller than that of the first memory circuit; a readout line commonly connected to the first memory circuit and the second memory circuit; a sense amplifier configured to compare a voltage of a first bit signal or a second bit signal with a reference voltage, where the first bit signal being inputted from the first memory circuit through the readout line and the second bit signal being inputted from the second memory circuit through the readout line; and a readout conditioning circuit configured to change at least one of an operation timing of the sense amplifier and the reference voltage corresponding to the first bit signal and the second bit signal.