18183583. IMAGE SENSOR AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kook Tae Kim of Suwon-si (KR)

Jingyun Kim of Suwon-si (KR)

Byeongtaek Bae of Suwon-si (KR)

Seunghwi Yoo of Suwon-si (KR)

IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18183583 titled 'IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The abstract describes an image sensor that includes various layers and patterns to improve its performance.

  • The image sensor has a substrate with two surfaces, a fixed charge layer on one surface, and an interlayer dielectric layer covering the other surface.
  • There is a device isolation part adjacent to the first surface in the substrate, and a pixel isolation part in the substrate.
  • The pixel isolation part consists of a conductive pattern, a buried dielectric pattern, and an isolation dielectric pattern.
  • The isolation dielectric pattern is in contact with both the fixed charge layer and the interlayer dielectric layer.
  • The isolation dielectric layer has different thicknesses at different levels, with a thicker portion between the buried dielectric pattern and the conductive pattern, and a thinner portion at the bottom surface of the fixed charge layer.

Potential applications of this technology:

  • Image sensors are used in various devices such as digital cameras, smartphones, and surveillance systems. This innovation can improve the performance and image quality of these devices.

Problems solved by this technology:

  • Image sensors often suffer from crosstalk, which is the interference between adjacent pixels. The pixel isolation part in this invention helps reduce crosstalk, resulting in clearer and more accurate images.

Benefits of this technology:

  • Improved image quality: The reduction in crosstalk leads to sharper and more detailed images.
  • Enhanced performance: The optimized layer thicknesses and patterns improve the overall performance of the image sensor.
  • Compatibility: The proposed design can be implemented in existing image sensor manufacturing processes without significant modifications.


Original Abstract Submitted

An image sensor comprises a substrate having first and second surfaces opposite to each other, a fixed charge layer in contact with the second surface, an interlayer dielectric layer covering the first surface, a device isolation part adjacent to the first surface in the substrate, and a pixel isolation part in the substrate. The pixel isolation part includes a conductive pattern, a buried dielectric pattern, and an isolation dielectric pattern that is simultaneously in contact with the fixed charge layer and the interlayer dielectric layer. The isolation dielectric layer has a first thickness at a level between the buried dielectric pattern and the conductive pattern. The isolation dielectric layer has a second thickness at a level of a bottom surface of the fixed charge layer. The second thickness is different from the first thickness.