18182529. SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Kotaro Fujii of Yokkaichi (JP)

SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18182529 titled 'SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor storage device described in the abstract includes multiple layers and components that are stacked on top of each other in a specific configuration.

  • The device includes a first wiring and a second wiring for electrical connections.
  • A first insulating layer is present with three portions - one stacked on the first wiring, one stacked on the second wiring, and one on the opposite side of the first and second wirings.
  • A first insulator and a conductor are also part of the device.

Potential Applications

The technology described in this patent application could be used in various electronic devices such as smartphones, laptops, and tablets for data storage purposes.

Problems Solved

This technology helps in improving the efficiency and performance of semiconductor storage devices by providing a specific configuration that enhances data storage capabilities.

Benefits

The benefits of this technology include increased data storage capacity, improved data transfer speeds, and overall enhanced performance of electronic devices.

Potential Commercial Applications

The technology could be utilized in the production of consumer electronics, data storage devices, and other semiconductor-based products.

Possible Prior Art

One possible prior art for this technology could be the development of similar semiconductor storage devices with multiple layers and components stacked in a specific configuration for improved performance.

Unanswered Questions

How does this technology compare to existing semiconductor storage devices in terms of data storage capacity and speed?

This article does not provide a direct comparison between this technology and existing semiconductor storage devices in terms of data storage capacity and speed. Further research and testing would be needed to determine the specific advantages of this technology over existing options.

What are the potential challenges or limitations of implementing this technology in commercial electronic devices?

The article does not address the potential challenges or limitations of implementing this technology in commercial electronic devices. Factors such as cost, compatibility, and manufacturing processes could impact the widespread adoption of this technology. Further analysis would be required to assess these aspects.


Original Abstract Submitted

A semiconductor storage device according to an embodiment includes a first wiring, a second wiring, a first insulating layer, a first insulator, and a conductor. The first insulating layer has a first portion, a second portion, and a third portion. The first portion is stacked on the first wiring. The second portion is stacked on the second wiring. The third portion is on the opposite side of the first wiring and the second wiring with respect to the first portion and the second portion.