18181731. SEMICONDUCTOR DEVICE INCLUDING DUMMY PAD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICE INCLUDING DUMMY PAD

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

INHYO Hwang of Suwon-si (KR)

YOUNG LYONG Kim of Suwon-si (KR)

HYUNSOO Chung of Suwon-si (KR)

SEMICONDUCTOR DEVICE INCLUDING DUMMY PAD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18181731 titled 'SEMICONDUCTOR DEVICE INCLUDING DUMMY PAD

Simplified Explanation

The semiconductor device described in the patent application includes multiple layers and structures to improve its performance and functionality. Here is a simplified explanation of the abstract:

  • The device has a first substrate with device and edge regions.
  • A first insulating structure is placed on the first substrate.
  • At the uppermost end of the first insulating structure, there are first metal pads and first dummy pads.
  • A second insulating structure is added on top of the first insulating structure.
  • At the lowermost end of the second insulating structure, there are second metal pads and second dummy pads.
  • A first interconnection structure is present in the first insulating structure, connected to the first metal pads and isolated from the first dummy pads.
  • A second interconnection structure is present in the second insulating structure, connected to the second metal pads and isolated from the second dummy pads.
  • Some of the first metal pads are in contact with respective second metal pads on the device region.
  • Some of the first dummy pads are in contact with respective second dummy pads on the edge region.

Potential applications of this technology:

  • Semiconductor devices with improved performance and functionality.
  • Enhanced interconnection structures for better electrical connections.
  • Increased reliability and efficiency in semiconductor devices.

Problems solved by this technology:

  • Improved isolation between metal pads and dummy pads, reducing the risk of electrical interference.
  • Enhanced interconnection structures prevent signal loss and improve overall device performance.
  • Better contact between metal pads in different regions of the device, ensuring efficient electrical connections.

Benefits of this technology:

  • Higher reliability and efficiency in semiconductor devices.
  • Improved signal transmission and reduced signal loss.
  • Enhanced functionality and performance of the device.
  • Reduced risk of electrical interference and improved isolation between different regions of the device.


Original Abstract Submitted

A semiconductor device may include a first substrate including device and edge regions, a first insulating structure on the first substrate, first metal pads and first dummy pads at the uppermost end of the first insulating structure, a second insulating structure on the first insulating structure, second metal pads and second dummy pads at the lowermost end of the second insulating structure, a first interconnection structure in the first insulating structure, electrically connected to the first metal pads and electrically isolated from the first dummy pads, and a second interconnection structure in the second insulating structure, electrically connected to the second metal pads, and electrically isolated from the second dummy pads. Ones of the first metal pads may be in contact with respective ones of the second metal pads on the device region, and ones of the first dummy pads may be in contact with respective ones of the second dummy pads on the edge region.

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