View source for 18180716. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)

=SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Mitsubishi Electric Corporation|Mitsubishi Electric Corporation]]


[[Category:Mitsubishi Electric Corporation]]

==Inventor(s)==

[[:Category:Kohei Sako of Tokyo (JP)|Kohei Sako of Tokyo (JP)]][[Category:Kohei Sako of Tokyo (JP)]]

[[:Category:Yuji Ebiike of Tokyo (JP)|Yuji Ebiike of Tokyo (JP)]][[Category:Yuji Ebiike of Tokyo (JP)]]

[[:Category:Kazuya Inoue of Tokyo (JP)|Kazuya Inoue of Tokyo (JP)]][[Category:Kazuya Inoue of Tokyo (JP)]]

==SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18180716 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes a semiconductor layer with a trench, a buried electrode, an upper electrode, an insulating film, a first electrode, and a second electrode. The insulating film has three portions and the upper electrode has a dent in the central portion.

* Semiconductor layer with trench
* Buried electrode inside the trench
* Upper electrode inside the trench
* Insulating film with three portions
* First electrode on the upper surface
* Second electrode on the lower surface
* Dent in the central portion of the upper electrode

== Potential Applications ==
This technology could be used in:
* Power electronics
* Semiconductor devices
* Integrated circuits

== Problems Solved ==
This technology helps in:
* Improving device performance
* Enhancing reliability
* Reducing power consumption

== Benefits ==
The benefits of this technology include:
* Higher efficiency
* Better thermal management
* Increased durability

== Potential Commercial Applications ==
This technology could be applied in:
* Consumer electronics
* Automotive industry
* Renewable energy sector

== Possible Prior Art ==
One possible prior art for this technology could be:
* Semiconductor devices with buried electrodes and insulating films

== Unanswered Questions ==

=== How does the dent in the central portion of the upper electrode affect device performance? ===
The dent in the upper electrode may impact the electrical characteristics of the device, but the specific effects are not detailed in the abstract.

=== What materials are used in the insulating film to achieve the three different portions? ===
The abstract does not specify the materials used in the insulating film to create the three different portions.


==Original Abstract Submitted==

A semiconductor device according to an aspect of the present disclosure, includes a semiconductor layer in which a trench is formed, a buried electrode provided inside the trench, an upper electrode provided above the buried electrode inside the trench, an insulating film provided inside the trench, a first electrode provided on an upper surface of the semiconductor layer, and a second electrode provided on a lower surface of the semiconductor layer, wherein the insulating film includes a first portion between the buried electrode and a side wall of the trench, a second portion between the upper electrode and the side wall of the trench, and a third portion between the buried electrode and the upper electrode, and a lower surface of the upper electrode has a dent in a central portion.



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