18180716. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18180716 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor layer with a trench, a buried electrode, an upper electrode, an insulating film, a first electrode, and a second electrode. The insulating film has three portions and the upper electrode has a dent in the central portion.
- Semiconductor layer with trench
- Buried electrode inside the trench
- Upper electrode inside the trench
- Insulating film with three portions
- First electrode on the upper surface
- Second electrode on the lower surface
- Dent in the central portion of the upper electrode
Potential Applications
This technology could be used in:
- Power electronics
- Semiconductor devices
- Integrated circuits
Problems Solved
This technology helps in:
- Improving device performance
- Enhancing reliability
- Reducing power consumption
Benefits
The benefits of this technology include:
- Higher efficiency
- Better thermal management
- Increased durability
Potential Commercial Applications
This technology could be applied in:
- Consumer electronics
- Automotive industry
- Renewable energy sector
Possible Prior Art
One possible prior art for this technology could be:
- Semiconductor devices with buried electrodes and insulating films
Unanswered Questions
How does the dent in the central portion of the upper electrode affect device performance?
The dent in the upper electrode may impact the electrical characteristics of the device, but the specific effects are not detailed in the abstract.
What materials are used in the insulating film to achieve the three different portions?
The abstract does not specify the materials used in the insulating film to create the three different portions.
Original Abstract Submitted
A semiconductor device according to an aspect of the present disclosure, includes a semiconductor layer in which a trench is formed, a buried electrode provided inside the trench, an upper electrode provided above the buried electrode inside the trench, an insulating film provided inside the trench, a first electrode provided on an upper surface of the semiconductor layer, and a second electrode provided on a lower surface of the semiconductor layer, wherein the insulating film includes a first portion between the buried electrode and a side wall of the trench, a second portion between the upper electrode and the side wall of the trench, and a third portion between the buried electrode and the upper electrode, and a lower surface of the upper electrode has a dent in a central portion.
