18180439. HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
Contents
- 1 HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
Organization Name
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Inventor(s)
Takayuki Teraguchi of Kawasaki Kanagawa (JP)
HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18180439 titled 'HIGH FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
Simplified Explanation
The SPnT-type high frequency switch described in the patent application includes a series of first MOS transistors, second MOS transistors, and a capacitor. The first MOS transistors are connected in series between RF terminals and an RF common terminal. The second MOS transistors are connected to adjacent first MOS transistors, and a capacitor is connected between ground and the second MOS transistor.
- The high frequency switch includes a series of first MOS transistors connected between RF terminals and an RF common terminal.
- Second MOS transistors are connected to adjacent first MOS transistors.
- A capacitor is connected between ground and a second MOS transistor.
Potential Applications
The technology described in the patent application could be used in:
- RF communication systems
- Wireless devices
- Radar systems
Problems Solved
This technology helps in:
- Improving signal transmission efficiency
- Reducing signal loss
- Enhancing overall system performance
Benefits
The benefits of this technology include:
- Higher signal quality
- Improved reliability
- Enhanced system functionality
Potential Commercial Applications
The technology could be applied in various commercial sectors such as:
- Telecommunications
- Aerospace industry
- Consumer electronics
Possible Prior Art
One possible prior art for this technology could be:
- Existing high frequency switches with similar configurations and functions.
Unanswered Questions
How does this technology compare to existing high frequency switches in terms of performance and efficiency?
The article does not provide a direct comparison with existing high frequency switches.
Are there any limitations or drawbacks to implementing this technology in practical applications?
The article does not address any potential limitations or drawbacks of implementing this technology.
Original Abstract Submitted
According to an embodiment, an SPnT-type high frequency switch includes a plurality of first MOS transistors, second MOS transistors, and a capacitor. The plurality of first MOS transistors are connected in series between one of a plurality of RF terminals and an RF common terminal. The second MOS transistors have ends each connected to adjacent first MOS transistors among the first MOS transistors. The capacitor is connected between ground and another end of a second MOS transistor having one end connected to another end of a first MOS transistor having one end connected to the one of the RF terminals among the first and second MOS transistors.
