18179922. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yuya Omura of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18179922 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a patent application related to transistors and a resistance-capacitance element. The transistors have a gate insulating film with a gate dielectric film and a gate electrode made of a metal material. The resistance-capacitance element is formed by stacking various layers on a semiconductor substrate, including insulating films and conductive layers with different resistances.
- Transistors with gate insulating film and gate electrode made of metal material
- Resistance-capacitance element formed by stacking insulating films and conductive layers with different resistances
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This technology helps in improving the performance and efficiency of transistors and resistance-capacitance elements in semiconductor devices.
Benefits
The use of different materials for the conductive layers in the resistance-capacitance element can enhance the overall functionality and reliability of the semiconductor device.
Potential Commercial Applications
The technology could find applications in the semiconductor industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art could be the use of similar materials in the construction of transistors and resistance-capacitance elements in semiconductor devices.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and existing transistor designs. Further research or testing may be needed to evaluate the performance differences.
What are the specific semiconductor devices that could benefit the most from this technology?
The article does not specify the exact semiconductor devices that could benefit the most from this technology. Additional studies or experiments may be required to determine the optimal applications.
Original Abstract Submitted
According to one embodiment, transistors and a resistance-capacitance element are provided. The transistors each have a gate insulating film with a gate dielectric film and a gate electrode of a metal material. The resistance-capacitance element is provided by stacking a first insulating film, a first conductive layer, a stopper insulating film, a second insulating film, and a second conductive layer on an upper surface of a semiconductor substrate. The second insulating film includes the gate dielectric film like the gate insulating film. The second conductive layer is made of the same metal material as the gate electrode. The first conductive layer is a conductive material having a higher resistance than the second conductive layer.
