18179728. RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

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RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Takayuki Teraguchi of Kawasaki Kanagawa (JP)

RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18179728 titled 'RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a radio frequency switch of a Single-Pole-n-Throw (SPnT) type, which includes various components such as RF terminals, MOS transistors, termination resistors, and common terminals.

  • The radio frequency switch includes first MOS transistors between the RF terminals and the common terminal, as well as termination resistors connected to the RF terminals in a selected state.
  • Second MOS transistors are connected in parallel to the termination resistors and are controlled in the same manner as the first MOS transistors.

Potential Applications

This technology could be applied in:

  • Wireless communication systems
  • Radar systems
  • Satellite communication systems

Problems Solved

This technology helps in:

  • Improving signal routing efficiency
  • Reducing signal loss
  • Enhancing overall system performance

Benefits

The benefits of this technology include:

  • Increased reliability in signal switching
  • Enhanced signal quality
  • Improved system flexibility

Potential Commercial Applications

This technology could be commercially applied in:

  • Telecommunication equipment
  • Aerospace and defense systems
  • Test and measurement devices

Possible Prior Art

One possible prior art for this technology could be the use of traditional mechanical switches in RF systems. However, these switches may not offer the same level of efficiency and performance as the described MOS transistor-based switch.

Unanswered Questions

How does this technology compare to other types of RF switches on the market?

This article does not provide a direct comparison with other types of RF switches, such as MEMS switches or PIN diode switches. Further research or testing may be needed to determine the advantages and disadvantages of this technology in comparison to others.

What are the potential limitations or drawbacks of using MOS transistors in RF switches?

The article does not address any potential limitations or drawbacks of using MOS transistors in RF switches, such as power consumption, linearity, or frequency limitations. Additional studies or experiments may be required to fully understand the practical implications of this technology.


Original Abstract Submitted

According to one embodiment, a radio frequency switch of a Single-Pole-n-Throw (SPnT) type includes a first RF terminal, a second RF terminal, a single RF common terminal, first MOS transistors, termination resistors, and second MOS transistors. The first MOS transistors are respectively provided between the first RF terminal and the RF common terminal and between the second RF terminal and the RF common terminal. Each of the termination resistors is configured to be connected to the first RF terminal or the second RF terminal in a selected state where a corresponding one of the first MOS transistors is in an OFF state. The second MOS transistors are connected in parallel to the respective termination resistors, and each of the second MOS transistors is configured to be controlled in a same manner as a corresponding one of the first MOS transistors.

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