18179728. RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takayuki Teraguchi of Kawasaki Kanagawa (JP)
RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18179728 titled 'RADIO FREQUENCY SWITCH AND SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a radio frequency switch of a Single-Pole-n-Throw (SPnT) type that includes various components such as MOS transistors and termination resistors. The switch allows for control over the connection between RF terminals and a common terminal.
- The radio frequency switch is of the Single-Pole-n-Throw (SPnT) type.
- It includes first and second RF terminals, as well as a single RF common terminal.
- First MOS transistors are placed between the RF terminals and the common terminal.
- Termination resistors are connected to the RF terminals in a selected state.
- Second MOS transistors are connected in parallel to the termination resistors.
Potential Applications
This technology can be applied in:
- Wireless communication systems
- Radar systems
- Satellite communication systems
Problems Solved
- Efficient switching between RF terminals
- Reduction of signal loss
- Improved signal quality
Benefits
- Enhanced performance in RF systems
- Increased reliability
- Cost-effective solution
Potential Commercial Applications
- Telecommunications industry
- Aerospace and defense sector
- Consumer electronics market
Possible Prior Art
One possible prior art for this technology could be traditional RF switches that may not offer the same level of control and efficiency as the described SPnT switch.
Unanswered Questions
How does this technology compare to existing RF switches in terms of performance and cost?
The article does not provide a direct comparison with existing RF switches in the market.
What are the specific technical specifications and limitations of this SPnT switch?
The article does not delve into the detailed technical specifications and limitations of the SPnT switch.
Original Abstract Submitted
According to one embodiment, a radio frequency switch of a Single-Pole-n-Throw (SPnT) type includes a first RF terminal, a second RF terminal, a single RF common terminal, first MOS transistors, termination resistors, and second MOS transistors. The first MOS transistors are respectively provided between the first RF terminal and the RF common terminal and between the second RF terminal and the RF common terminal. Each of the termination resistors is configured to be connected to the first RF terminal or the second RF terminal in a selected state where a corresponding one of the first MOS transistors is in an OFF state. The second MOS transistors are connected in parallel to the respective termination resistors, and each of the second MOS transistors is configured to be controlled in a same manner as a corresponding one of the first MOS transistors.
