18179294. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Saya Shimomura of Komatsu Ishikawa (JP)

Hiroaki Katou of Nonoichi Ishikawa (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18179294 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract consists of various regions, electrodes, conductive portions, and insulating portions to enable its functionality.

  • The device includes a first electrode, a second electrode with two portions, and multiple semiconductor regions.
  • There are conductive portions within the semiconductor regions and insulating portions separating different components of the device.
  • A gate electrode is present between specific regions to control the flow of current within the device.

Potential Applications

This semiconductor device could be used in various electronic applications such as integrated circuits, power electronics, and sensors.

Problems Solved

This technology helps in improving the efficiency and performance of electronic devices by controlling the flow of current and enhancing conductivity.

Benefits

The device offers better control over electronic signals, increased efficiency, and improved reliability in electronic systems.

Potential Commercial Applications

The semiconductor device could find applications in the manufacturing of consumer electronics, automotive electronics, and industrial automation systems.

Possible Prior Art

Prior art in the field of semiconductor devices includes similar structures and designs used in electronic components and integrated circuits.

Unanswered Questions

How does this semiconductor device compare to existing technologies in terms of efficiency and performance?

The article does not provide a direct comparison with existing technologies to evaluate the efficiency and performance improvements offered by this semiconductor device.

What are the specific manufacturing processes involved in producing this semiconductor device?

The article does not detail the specific manufacturing processes or techniques used to fabricate this semiconductor device, leaving a gap in understanding the production methods.


Original Abstract Submitted

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first region, a second region, a third region, a first conductive portion, a second conductive portion, a gate electrode, a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion. The second electrode has a first portion and a second portion extending from the first portion toward the first electrode. The first region is between the first electrode and the second electrode. The second region is between the first region and the second electrode. The third region is between the second semiconductor region and the second electrode. The first conductive portion is in the first semiconductor region. The gate electrode is between the second region and the second portion. The second conductive portion is between the first conductive portion and the gate electrode.